Heteroepitaxial (111) ZnGa2O4 Thin Films Grown on (00.1) Sapphire by Pulsed Laser Deposition,Physica Status Solidi-Rapid Research Letters

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Heteroepitaxial (111) ZnGa2O4 Thin Films Grown on (00.1) Sapphire by Pulsed Laser Deposition
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-06-24 , DOI: 10.1002/pssr.202000270
Sijun Luo _{1,

2} , George F. Harrington _{1,

3} , Kuan-Ting Wu ₁ , Thomas Lippert _{1,

2,

4}

Affiliation

Heteroepitaxial ZnGa₂O₄ thin films grown on sapphire substrates would be preferable for fundamental studies on properties of this material for device applications. To achieve near‐stoichiometric ZnGa₂O₄ epitaxial thin films by pulsed laser deposition (PLD), the severe loss of Zn must be overcome. Herein, the fabrication and characterization of epitaxial (111) ZnGa₂O₄ thin films grown on (00.1) sapphire substrates by PLD using a Zn_0.97Ga_0.03O target are reported. A deposition temperature of 750 °C and a laser fluence of 3.5 J cm⁻² are suitable for growing near‐stoichiometric ZnGa₂O₄ film. The in‐plane orientation relationship is identified to be

[\bar{1} \bar{1} 2]

ZnGa₂O₄//[11.0] Al₂O₃. A 14.2 nm thick (111) ZnGa₂O₄ epitaxial thin film with a Zn/Ga atomic ratio of about 0.47 shows a narrow full width at half maximum value for the rocking curve of 0.1° and a direct optical bandgap of 4.9 eV.

中文翻译：

（00.1）蓝宝石上通过脉冲激光沉积生长的异质外延（111）ZnGa2O4薄膜

在蓝宝石衬底上生长的异质外延ZnGa ₂ O ₄薄膜对于基础材料在器件应用中的性能的基础研究将是优选的。为了通过脉冲激光沉积（PLD）实现接近化学计量的ZnGa ₂ O ₄外延薄膜，必须克服锌的严重损失。在本文中，报道了使用Zn _0.97 Ga _0.03 O靶通过PLD在（00.1）蓝宝石衬底上生长的外延（111）ZnGa ₂ O ₄薄膜的制备和表征。750°C的沉积温度和3.5 J cm ^-2的激光注量适合于生长接近化学计量的ZnGa ₂ O₄片。面内定向关系被确定为