Efficient and low‐cost production of high‐quality aluminum nitride (AlN) films during heteroepitaxy is the key for the development of deep ultraviolet light‐emitting diodes (DUV‐LEDs). Here, the quasi‐2D growth of high‐quality AlN film with low strain and low dislocation density on graphene (Gr) is presented and a high‐performance 272 nm DUV‐LED is demonstrated. Guided by first‐principles calculations, it is found that AlN grown on Gr prefers lateral growth both energetically and kinetically, thereby resulting in a Gr‐driven quasi‐2D growth mode. The strong lateral growth mode enables most of dislocations to annihilate each other at the AlN/Gr interface, and therefore the AlN epilayer can quickly coalesce and flatten the nanopatterned sapphire substrate. Based on the high quality and low strain of AlN film grown on Gr, the as‐fabricated 272 nm DUV‐LED shows a 22% enhancement of output power than that with low‐temperature AlN buffer, following a negligible wavelength shift under high current. This facile strategy opens a pathway to drastically improve the performance of DUV‐LEDs.

中文翻译：

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在石墨烯上进行氮化铝薄膜的准2D生长，以增强深紫外发光二极管。

异质外延期间高效低成本生产高质量的氮化铝（AlN）膜是开发深紫外发光二极管（DUV-LED）的关键。在此，提出了在石墨烯（Gr）上具有低应变和低位错密度的高质量AlN薄膜的准2D生长，并展示了高性能272 nm DUV-LED。在第一性原理计算的指导下，发现在Gr上生长的AlN在能量和动力学上都倾向于侧向生长，从而导致了Gr驱动的准2D生长模式。强大的横向生长模式使大多数位错能够在AlN / Gr界面上相互消除，因此AlN外延层可以快速合并并平坦化纳米图案化的蓝宝石衬底。基于生长在Gr上的AlN膜的高质量和低应变，装配后的272 nm DUV-LED的输出功率比低温AlN缓冲器的输出功率提高了22％，这是由于在大电流下波长漂移可忽略不计。这种简便的策略为大幅提高DUV-LED的性能开辟了道路。