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Quasi-2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light-Emitting Diodes.
Advanced Science ( IF 14.3 ) Pub Date : 2020-06-23 , DOI: 10.1002/advs.202001272 Hongliang Chang 1, 2 , Zhaolong Chen 3, 4 , Bingyao Liu 4, 5 , Shenyuan Yang 2, 6 , Dongdong Liang 1, 2 , Zhipeng Dou 4, 5 , Yonghui Zhang 7 , Jianchang Yan 1, 2 , Zhiqiang Liu 1, 2 , Zihui Zhang 7 , Junxi Wang 1, 2 , Jinmin Li 1, 2 , Zhongfan Liu 3, 4 , Peng Gao 5, 8 , Tongbo Wei 1, 2
Advanced Science ( IF 14.3 ) Pub Date : 2020-06-23 , DOI: 10.1002/advs.202001272 Hongliang Chang 1, 2 , Zhaolong Chen 3, 4 , Bingyao Liu 4, 5 , Shenyuan Yang 2, 6 , Dongdong Liang 1, 2 , Zhipeng Dou 4, 5 , Yonghui Zhang 7 , Jianchang Yan 1, 2 , Zhiqiang Liu 1, 2 , Zihui Zhang 7 , Junxi Wang 1, 2 , Jinmin Li 1, 2 , Zhongfan Liu 3, 4 , Peng Gao 5, 8 , Tongbo Wei 1, 2
Affiliation
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Efficient and low‐cost production of high‐quality aluminum nitride (AlN) films during heteroepitaxy is the key for the development of deep ultraviolet light‐emitting diodes (DUV‐LEDs). Here, the quasi‐2D growth of high‐quality AlN film with low strain and low dislocation density on graphene (Gr) is presented and a high‐performance 272 nm DUV‐LED is demonstrated. Guided by first‐principles calculations, it is found that AlN grown on Gr prefers lateral growth both energetically and kinetically, thereby resulting in a Gr‐driven quasi‐2D growth mode. The strong lateral growth mode enables most of dislocations to annihilate each other at the AlN/Gr interface, and therefore the AlN epilayer can quickly coalesce and flatten the nanopatterned sapphire substrate. Based on the high quality and low strain of AlN film grown on Gr, the as‐fabricated 272 nm DUV‐LED shows a 22% enhancement of output power than that with low‐temperature AlN buffer, following a negligible wavelength shift under high current. This facile strategy opens a pathway to drastically improve the performance of DUV‐LEDs.
中文翻译：
石墨烯上氮化铝薄膜的准二维生长，用于增强深紫外发光二极管。
在异质外延过程中高效、低成本地生产高质量氮化铝（AlN）薄膜是开发深紫外发光二极管（DUV-LED）的关键。在此，提出了在石墨烯 (Gr) 上准二维生长低应变和低位错密度的高质量 AlN 薄膜，并演示了高性能 272 nm DUV-LED。在第一性原理计算的指导下，发现在Gr上生长的AlN在能量和动力学上更倾向于横向生长，从而产生Gr驱动的准二维生长模式。强横向生长模式使得大多数位错在AlN/Gr界面处相互湮灭，因此AlN外延层可以快速聚结并平坦化纳米图案蓝宝石衬底。基于在 Gr 上生长的 AlN 薄膜的高质量和低应变，所制造的 272 nm DUV-LED 的输出功率比使用低温 AlN 缓冲器的输出功率提高了 22%，并且在高电流下波长漂移可以忽略不计。这种简单的策略开辟了一条大幅提高 DUV-LED 性能的途径。
更新日期：2020-08-05
中文翻译：
石墨烯上氮化铝薄膜的准二维生长，用于增强深紫外发光二极管。
在异质外延过程中高效、低成本地生产高质量氮化铝（AlN）薄膜是开发深紫外发光二极管（DUV-LED）的关键。在此，提出了在石墨烯 (Gr) 上准二维生长低应变和低位错密度的高质量 AlN 薄膜，并演示了高性能 272 nm DUV-LED。在第一性原理计算的指导下，发现在Gr上生长的AlN在能量和动力学上更倾向于横向生长，从而产生Gr驱动的准二维生长模式。强横向生长模式使得大多数位错在AlN/Gr界面处相互湮灭，因此AlN外延层可以快速聚结并平坦化纳米图案蓝宝石衬底。基于在 Gr 上生长的 AlN 薄膜的高质量和低应变，所制造的 272 nm DUV-LED 的输出功率比使用低温 AlN 缓冲器的输出功率提高了 22%，并且在高电流下波长漂移可以忽略不计。这种简单的策略开辟了一条大幅提高 DUV-LED 性能的途径。
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