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Al2O3-TiOx as full area passivating contacts for silicon surfaces utilizing oxygen scavenging titanium interlayers
Solar Energy Materials and Solar Cells ( IF 6.3 ) Pub Date : 2020-09-01 , DOI: 10.1016/j.solmat.2020.110651
David Tröger , Matthias Grube , Jana Lehnert , Thomas Mikolajick

Abstract Full area transparent contacts are the next step in order to enhance the efficiency of silicon based passivated emitter rear cells. Here we present a full area contact based on Al2O3 and reduced TiOx. The thin Al2O3 acts as passivating tunneling layer, whereas the TiOx is used for charge carrier transport. This work provides a way to enhance the conductivity of TiOx by forming gas annealing (FGA) and doping with tantalum. Furthermore, it addresses the native SiOx without chemical treatment. A thin titanium interlayer (Ti-IL) serves this purpose. Current-voltage measurements reveal a contact resistance of 30 Ωcm2 for 50 nm of pure TiOx. Ta-doping combined with a 6 nm thick Ti-IL reduces the contact resistance by two orders of magnitude down to 0.36 Ωcm2. The passivation by an Al2O3/TiOx layer stack leads to an excellent surface recombination velocity (SRV) of 5.6 cm/s with only 3 nm Al2O3 but results in a large contact resistance of about 100 Ωcm2. This contact resistance can be reduced by three orders of magnitude down to 0.25 Ωcm2 including a 10 nm Ti-IL while still providing a sufficient SRV of about 60 cm/s. The absorption coefficient of 6.3×105 cm−1 inhibits the usage as front contact for solar cells. However, it could be used as a backside contact, since the transmission is less important on the backside of a monofacial solar cell.

中文翻译:

Al2O3-TiOx 作为硅表面的全面积钝化触点,利用氧清除钛夹层

摘要 全面积透明触点是提高硅基钝化发射极后电池效率的下一步。在这里,我们提出了基于 Al2O3 和还原 TiOx 的全区域接触。薄的 Al2O3 用作钝化隧道层,而 TiOx 用于电荷载流子传输。这项工作提供了一种通过形成气体退火 (FGA) 和掺杂钽来提高 TiOx 导电性的方法。此外,它解决了未经化学处理的天然 SiOx。薄钛夹层 (Ti-IL) 用于此目的。电流-电压测量显示,50 nm 纯 TiOx 的接触电阻为 30 Ωcm2。Ta 掺杂与 6 nm 厚的 Ti-IL 相结合,将接触电阻降低了两个数量级,降至 0.36 Ωcm2。Al2O3/TiOx 层堆叠的钝化导致了 5.6 cm/s 的优异表面复合速度 (SRV),只有 3 nm 的 Al2O3,但导致了大约 100 Ωcm2 的大接触电阻。这种接触电阻可以降低三个数量级,低至 0.25 Ωcm2,包括 10 nm Ti-IL,同时仍提供约 60 cm/s 的足够 SRV。6.3×105 cm-1 的吸收系数抑制了作为太阳能电池前接触的使用。然而,它可以用作背面接触,因为传输在单面太阳能电池的背面不太重要。25 Ωcm2 包括 10 nm Ti-IL,同时仍提供约 60 cm/s 的足够 SRV。6.3×105 cm-1 的吸收系数抑制了作为太阳能电池前接触的使用。然而,它可以用作背面接触,因为传输在单面太阳能电池的背面不太重要。25 Ωcm2 包括 10 nm Ti-IL,同时仍提供约 60 cm/s 的足够 SRV。6.3×105 cm-1 的吸收系数抑制了作为太阳能电池前接触的使用。然而,它可以用作背面接触,因为传输在单面太阳能电池的背面不太重要。
更新日期:2020-09-01
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