Abstract The impact of inorganic semiconductor materials (TiO2, ZnO, WO3, and V2O5) on the structural, morphological, electrical and optical characteristics of the synthesized polyvinyl alcohol (PVA) was investigated. The fabricated thin films were deposited onto ITO glass substrates using the simple drop-casting technique. X-ray diffractometer (XRD) was used to examine the structural properties of the films. Fourier transform infrared spectroscopy (FTIR) to identify the chemical bonds and band shifts of the polymeric material. Filed emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) were used to characterize the morphology and surface roughness of the thin films. Electrical behaviour was obtained by Hall effect instrument, and optical spectrums were obtained by ultraviolet–visible (UV–Vis) spectroscopy. Photoluminescence (PL) spectra were utilized to locate the emission bands of the hybrid films. FTIR spectra confirm the hybridization of the organic PVA polymer with the inorganic semiconductor thin films. PVA/TiO2 thin film exhibited the largest grain size (26.7 nm), and the highest surface roughness (20.4 nm), conductivity (1.64 Ω cm, 745 cm2/V.s, and 5.11 × 1015/cm3), absorbance, and energy band gap (4 eV). While PVA/ZnO thin film presented the smallest grain size (15.4 nm), high surface roughness (12.4 nm), the lowest conductivity (844.70 Ω cm, 358 cm2/V.s, and 2.06 × 1013/cm3), high absorbance, and the lowest energy band gap (3.79 eV). The results of PL spectra confirm the potential application of the synthesized organic/inorganic hybrid materials (PVA/TiO2 and PVA/ZnO) in the manufacture of polymer light emitting diodes (PLEDs) due to their clear emission bands.

中文翻译：

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用于潜在发光应用的混合有机/无机半导体材料的表征

摘要 研究了无机半导体材料（TiO2、ZnO、WO3 和 V2O5）对合成聚乙烯醇（PVA）的结构、形态、电学和光学特性的影响。使用简单的滴铸技术将制造的薄膜沉积在 ITO 玻璃基板上。X射线衍射仪（XRD）用于检查薄膜的结构特性。傅里叶变换红外光谱 (FTIR) 用于识别聚合物材料的化学键和带位移。使用场发射扫描电子显微镜 (FESEM) 和原子力显微镜 (AFM) 来表征薄膜的形貌和表面粗糙度。电气行为由霍尔效应仪器获得，光谱由紫外-可见（UV-Vis）光谱获得。利用光致发光 (PL) 光谱来定位混合薄膜的发射带。FTIR 光谱证实了有机 PVA 聚合物与无机半导体薄膜的杂化。PVA/TiO2 薄膜表现出最大的晶粒尺寸 (26.7 nm)、最高的表面粗糙度 (20.4 nm)、电导率 (1.64 Ω cm、745 cm2/Vs 和 5.11 × 1015/cm3)、吸光度和能带隙(4 eV)。PVA/ZnO 薄膜呈现出最小的晶粒尺寸 (15.4 nm)、高表面粗糙度 (12.4 nm)、最低的电导率 (844.70 Ω cm、358 cm2/Vs 和 2.06 × 1013/cm3)、高吸光度和最低能带隙 (3.79 eV)。