In this paper, we designed and fabricated a graphene transferred to grating structure with high absorption from 4 µm to 14 µm. The grating structure was composed of Au/SiO₂/Au and the graphene was grown by chemical vapor deposition (CVD) in vacuum conditions. We have experimentally demonstrated that magnetic polaritons (MPs) and graphene plasmon were excited to achieve high absorption in six sets of graphene grating devices in the infrared region, which were in good agreement with the simulation results. We also discuss the effect of controlling the Fermi level of graphene on the absorption spectrum of the device. The research method can provide potential support for the application of graphene in infrared optoelectronics.

在本文中，我们设计并制造了一种石墨烯，该石墨烯可在4 µm至14 µm的高吸收率下转移到光栅结构中。光栅结构由Au / SiO ₂ / Au组成，并且石墨烯在真空条件下通过化学气相沉积（CVD）生长。我们已经通过实验证明，在六组石墨烯光栅器件在红外区域，磁极化子（MPs）和石墨烯等离子体激元被激发以实现高吸收，这与模拟结果非常吻合。我们还将讨论控制石墨烯费米能级对器件吸收光谱的影响。该研究方法可为石墨烯在红外光电中的应用提供潜在的支持。