Abstract

Charged nanoparticles have been shown to be spontaneously generated in the gas phase in various chemical vapor deposition (CVD). Furthermore, it has been shown that these charged nanoparticles can contribute to the growth of thin films, nanowires, nanotetrapods and so on. Here, the generation of charged silicon carbide (SiC) nanoparticles in the gas phase during a hot wire CVD process was studied by capturing nanoparticles with a different delay time on a silicon monoxide membrane of the copper mesh grid for transmission electron microscope. The average size of SiC nanoparticles captured for 30 s increased from 2.9 to 6.1 nm with increasing delay time from 0 to 60 min. The deposition behavior of SiC films was affected by the applied bias on a substrate holder. A homo-epitaxial SiC film as thick as ~ 200 nm was grown under the substrate bias of − 200 V, whereas polycrystalline SiC films were grown under 0 V and + 15 V. It indicates that nanoparticles generated in the gas phase should be charged.

Graphic Abstract

中文翻译：

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HWCVD过程中带电SiC纳米粒子的产生

摘要

已显示在各种化学气相沉积（CVD）中在气相中自发产生带电纳米粒子。此外，已经显示出这些带电的纳米颗粒可以促进薄膜，纳米线，纳米四足动物等的生长。在此，通过将具有不同延迟时间的纳米颗粒捕获在用于透射电子显微镜的铜网栅的一氧化硅膜上，研究了在热线CVD过程中气相中带电碳化硅（SiC）纳米颗粒的产生。在30 s内捕获的SiC纳米颗粒的平均尺寸从2.9 nm增加到6.1 nm，延迟时间从0增加到60 min。SiC膜的沉积行为受到在基板支架上施加的偏压的影响。

图形摘要