Abstract

Gate leakage current in lateral GaN wrap-gate nanowire transistors (WG-NWT) was investigated using current density–voltage (J_g–V_g) characteristics at room temperature. We found that the gate leakage current is strongly dependent on the top corner angle of the gate architecture. This leakage current was characterized by considering hopping (Poole–Frenkel emission) and trap-assisted thermionic emission mechanisms. Despite its smaller gate area, the gate leakage current of the lateral GaN WG-NWT without a 2DEG channel was higher than that of the device with a 2DEG channel for all applied gate biases. The reason for this is that the lateral GaN WG-NWT without 2DEG channel has a triangular cross-section with a sharp top corner angle resulting in a strong electric field due to geometrical field enhancement.

Graphic Abstract

中文翻译：

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栅极架构对GaN绕栅纳米线晶体管的栅极泄漏特性的影响

摘要

使用的电流密度-电压（在横向的GaN围栅纳米线晶体管（WG-NWT）栅极漏电流进行了研究Ĵ_克-V_克）在室温下的特性。我们发现栅极漏电流在很大程度上取决于栅极架构的顶角。通过考虑跳变（Poole-Frenkel发射）和陷阱辅助的热电子发射机理来表征泄漏电流。尽管其栅极面积较小，但对于所有施加的栅极偏置而言，不具有2DEG沟道的横向GaN WG-NWT的栅极泄漏电流要比具有2DEG沟道的器件的更高。原因是没有2DEG通道的侧面GaN WG-NWT的三角形横截面具有尖锐的顶角，由于几何场的增强，导致强电场。

图形摘要