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The prospective application of a graphene/MoS2 heterostructure in Si-HIT solar cells for higher efficiency
Nanoscale Advances ( IF 4.6 ) Pub Date : 2020-06-23 , DOI: 10.1039/d0na00309c
Chandra Kamal Borah 1 , Pawan K Tyagi 2, 3 , Sanjeev Kumar 1
Affiliation  

The efficiency of a Si-HIT (heterojunction with intrinsic thin layer) solar cell based on a graphene/MoS2 heterostructure has been optimized by varying the various parameters of graphene (Gr) as a transparent conducting electrode (TCE) and n-type molybdenum disulfide (n-MoS2) as an emitter layer. The photovoltaic performance of a graphene/n-MoS2/a-Si:H/p-cSi/Au single facial HIT solar cell has been studied using AFORS-HET v2.5 simulation software. A maximum output efficiency of 25.61% has been achieved. The obtained results were compared with the results from a commercially available a-Si:H layer and p-cSi wafer after simulation. Moreover, the dependence of the cell performance on changes in the TCE and the back contact materials has also been studied. Finally, it has been demonstrated that the graphene layer and n-MoS2 layer could act as a TCE and an efficient emitter layer, respectively, in a n-MoS2/p-cSi based HIT solar cell.

中文翻译:

石墨烯/MoS2异质结构在Si-HIT太阳能电池中的前瞻性应用以提高效率

通过改变石墨烯 (Gr) 作为透明导电电极 (TCE) 和 n 型钼的各种参数,优化了基于石墨烯/MoS 2异质结构的 Si-HIT(具有本征薄层的异质结)太阳能电池的效率二硫化物(n-MoS 2)作为发射极层。石墨烯/n-MoS 2的光伏性能/a-Si:H/p-cSi/Au 单面 HIT 太阳能电池已使用 AFORS-HET v2.5 仿真软件进行了研究。最大输出效率已达到 25.61%。将获得的结果与模拟后市售的 a-Si:H 层和 p-cSi 晶片的结果进行比较。此外,还研究了电池性能对 TCE 和背接触材料变化的依赖性。最后,已经证明石墨烯层和n-MoS 2层可以分别在基于n-MoS 2 /p-cSi 的HIT太阳能电池中充当TCE和高效发射极层。
更新日期:2020-08-11
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