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P-N conversion of charge carrier types and high photoresponsive performance of composition modulated ternary alloy W(SxSe1-x)2 field-effect transistors.
Nanoscale ( IF 5.8 ) Pub Date : 2020-06-23 , DOI: 10.1039/d0nr04633g Huimin Sun 1 , Xin Zhou 1 , Xiang Wang 1 , Liping Xu 1 , Jinzhong Zhang 1 , Kai Jiang 1 , Liyan Shang 1 , Zhigao Hu 2 , Junhao Chu 2
Nanoscale ( IF 5.8 ) Pub Date : 2020-06-23 , DOI: 10.1039/d0nr04633g Huimin Sun 1 , Xin Zhou 1 , Xiang Wang 1 , Liping Xu 1 , Jinzhong Zhang 1 , Kai Jiang 1 , Liyan Shang 1 , Zhigao Hu 2 , Junhao Chu 2
Affiliation
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Transition metal dichalcogenides (TMDs) have emerged as a new class of two-dimensional (2D) materials, which are promising for diverse applications in nanoelectronics, optoelectronics, and photonics. To satisfy the requirements of the building blocks of functional devices, systematic modulation of the band gap and carrier type of TMDs materials becomes a significant challenge. Here, we report a salt-assisted chemical vapor deposition (CVD) approach for the simultaneous growth of alloy W(SxSe1−x)2 nanosheets with variable alloy compositions. Electrical transport studies based on the as-fabricated W(SxSe1−x)2 nanosheet field-effect transistors (FETs) demonstrate that charge carrier types of alloy nanosheet transistors can be systematically tuned by adjusting the alloy composition. Temperature-dependent current measurement shows that the main scattering mechanism is the charged impurity scattering. The effective Schottky barrier heights of bipolar W(SxSe1−x)2 transistors are initially increased and then decreased with increasing positive (or negative) gate voltage, which is tunable by varying the alloy composition. In addition, the tunability of these W(SxSe1−x)2-based ambipolar transistors is suitable for logic and analog applications and represents a critical step toward future fundamental studies as well as for the rational design of new 2D electronics with tailored spectral responses, and simpler and higher integration densities. Finally, the high photoresponsivity (up to 914 mA W−1) and detectivity (4.57 × 1010 Jones) of ultrathin W(SxSe1−x)2 phototransistors imply their potential applications in flexible light-detection and light-harvesting devices. These band gap engineered 2D structures could open up an exciting opportunity and contribute to finding diverse applications in future functional electronic/optoelectronic devices.
中文翻译：
电荷载流子类型的PN转换和组成调制的三元合金W（SxSe1-x）2场效应晶体管的高光响应性能。
过渡金属二硫化碳（TMD）已作为一类新的二维（2D）材料出现，有望在纳米电子学，光电子学和光子学中得到广泛应用。为了满足功能器件的基本要求，TMDs材料的带隙和载流子类型的系统调制成为一项重大挑战。在这里，我们报告了盐辅助化学气相沉积（CVD）方法，用于同时生长具有可变合金成分的W（S x Se 1- x）2合金纳米片。基于组装后的W（S x Se 1− x）2的电传输研究纳米片场效应晶体管（FET）证明，可以通过调节合金成分来系统地调节合金纳米片晶体管的载流子类型。与温度有关的电流测量表明，主要的散射机理是带电杂质的散射。双极W（S x Se 1- x）2晶体管的有效肖特基势垒高度首先随着正（或负）栅极电压的增加而增加，然后降低，这可以通过改变合金成分来调节。另外，这些W（S x Se 1- x）2的可调性基于双极性晶体管的双极性晶体管适用于逻辑和模拟应用，是朝着未来的基础研究以及合理设计具有定制频谱响应，更简单和更高集成密度的新型2D电子产品迈出的关键一步。最后，超薄W（S x Se 1- x）2光电晶体管的高光敏度（高达914 mA W -1）和检测能力（4.57×10 10 Jones）表明它们在柔性光检测和光收集装置中的潜在应用。这些由带隙设计的2D结构可以带来令人兴奋的机会，并有助于在未来的功能性电子/光电设备中找到各种应用。
更新日期：2020-07-23
中文翻译：
电荷载流子类型的PN转换和组成调制的三元合金W（SxSe1-x）2场效应晶体管的高光响应性能。
过渡金属二硫化碳（TMD）已作为一类新的二维（2D）材料出现，有望在纳米电子学，光电子学和光子学中得到广泛应用。为了满足功能器件的基本要求，TMDs材料的带隙和载流子类型的系统调制成为一项重大挑战。在这里，我们报告了盐辅助化学气相沉积（CVD）方法，用于同时生长具有可变合金成分的W（S x Se 1- x）2合金纳米片。基于组装后的W（S x Se 1− x）2的电传输研究纳米片场效应晶体管（FET）证明，可以通过调节合金成分来系统地调节合金纳米片晶体管的载流子类型。与温度有关的电流测量表明，主要的散射机理是带电杂质的散射。双极W（S x Se 1- x）2晶体管的有效肖特基势垒高度首先随着正（或负）栅极电压的增加而增加，然后降低，这可以通过改变合金成分来调节。另外，这些W（S x Se 1- x）2的可调性基于双极性晶体管的双极性晶体管适用于逻辑和模拟应用，是朝着未来的基础研究以及合理设计具有定制频谱响应，更简单和更高集成密度的新型2D电子产品迈出的关键一步。最后，超薄W（S x Se 1- x）2光电晶体管的高光敏度（高达914 mA W -1）和检测能力（4.57×10 10 Jones）表明它们在柔性光检测和光收集装置中的潜在应用。这些由带隙设计的2D结构可以带来令人兴奋的机会，并有助于在未来的功能性电子/光电设备中找到各种应用。
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