In this work, we investigate the effect of trench process variation (TPV) on the inverter circuits built by the recessed-gate junctionless MOSFET (JLM). Through numerical simulation, analog parameters of inverters like the propagation delay (t p ) and the static noise margin (SNM) are found to fluctuate seriously due to this random variation. At the same time, subthreshold swing (SS) and threshold voltage of JLMs are found accompanying apparent fluctuations under the TPV and have a strikingly linear relationship with the SNM and t p , respectively. The physics insights of TPV are also analyzed from device level by separating it into the trench shape variation and channel thickness variation, respectively. Then the TPV is found to have a more severe impact on the characteristics of JLMs than the random dopant fluctuation in terms of SS, I on and DIBL. And a processing guideline is offered to ensure a reasonable SS value of the device. Finally, ...

中文翻译：

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考虑电路应用的凹栅无结MOSFET的沟槽工艺变化研究

在这项工作中，我们研究了沟槽工艺变化（TPV）对由凹栅无结MOSFET（JLM）构建的逆变器电路的影响。通过数值模拟，发现逆变器的模拟参数（如传播延迟（tp）和静态噪声容限（SNM））由于这种随机变化而严重波动。同时，发现JLM的亚阈值摆幅（SS）和阈值电压伴随着TPV下的明显波动，并且分别与SNM和tp有着惊人的线性关系。通过分别将TPV分为沟槽形状变化和沟道厚度变化，还可以从器件级别分析TPV的物理见解。然后发现，就SS而言，TPV对JLM的特性的影响比对随机掺杂剂波动的影响更大，我和DIBL。并且提供了处理指南以确保设备的合理SS值。最后...