Third-order intercept (TOI) and nonlinear distortion level (NDL) are studied for two GaAs based single heterostructure HEMTs of different gate width such as (200 μ m × 0.5 μ m) and (150 μ m × 0.5 μ m). The TOI being a specific figure of merit is a biasing, input power, frequency-dependent term which is related to the third-order intermodulation distortion (IMD3) component and the study extended from low to high temperatures. The main findings are that the output referenced TOI decreased while the input referenced TOI increased with frequency. Within the measured temperature range, the TOI and NDL change significantly following the behaviour of the IMD3 component. This data would offer assistance in a way that enhances insight of the performance of the GaAs based device working at high frequency and temperature to evaluate the impacts of device nonlinearity on the affectability of the radio and to identify a distortion-free operation.

中文翻译：

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SH GaAs HEMTs的三阶截距和非线性畸变水平的研究

研究了两种不同栅宽（例如（200μm×0.5μm）和（150μm×0.5μm））的基于GaAs的单异质结构HEMT的三阶截距（TOI）和非线性畸变能级（NDL）。TOI是一个特定的品质因数，它是一个偏置，输入功率，频率相关的术语，与三阶互调失真（IMD3）分量有关，并且研究从低温扩展到了高温。主要发现是，参考TOI的输出随频率降低而输入TOI的输入随频率增加。在测得的温度范围内，TOI和NDL随IMD3组件的行为而显着变化。