We fabricated 4H-SiC ultraviolet avalanche photodiode (APD) arrays and systematically investigated the effect of threading dislocations on electrical and single photon detection characteristics of 4H-SiC APDs. Based on a statistical correlation study of individual device performance and structural defect mapping revealed by molten KOH etching, it is determined with high confidence level that even a single threading dislocation within APD active region would lead to apparent device performance degradation, including increase of dark current near breakdown voltage, premature breakdown and reduction of single photon detection efficiency at fixed dark count rate.

中文翻译：

---

单线程位错对4H-SiC紫外雪崩光电二极管电和单光子检测特性的影响

我们制造了4H-SiC紫外雪崩光电二极管（APD）阵列，并系统地研究了螺纹位错对4H-SiC APD的电学和单光子检测特性的影响。根据熔融KOH蚀刻揭示的单个器件性能和结构缺陷图的统计相关性研究，可以高置信度确定即使APD有源区内的单个螺纹位错也会导致明显的器件性能下降，包括暗电流的增加接近击穿电压，过早击穿并降低了固定暗计数率下的单光子检测效率。