Mid-wavelength infrared planar photodiodes were demonstrated, in which both the epitaxy growth of InAs/GaSb superlattices and the thermal diffusion of p-type dopant were performed in production-scale metal–organic chemical vapor deposition reactors. The formation of a planar homojunction was confirmed by secondary ion mass spectroscopy and its I – V characteristics. A cut-off wavelength around 5 μm was determined in 77 K optical characterization, and photo-current as high as 600 nA was collected from a reverse-biased planar diode of 640 μm diameter. These preliminary results were obtained despite the structural degradation revealed by x-ray diffraction, and we attribute the degradation to the concert of thermal annealing and high Zn concentration behind the diffusion front.

中文翻译：

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金属有机化学气相沉积法制备的中红外InAs / GaSb超晶格平面光电二极管

演示了中波长红外平面光电二极管，其中InAs / GaSb超晶格的外延生长和p型掺杂剂的热扩散均在生产规模的金属有机化学气相沉积反应器中进行。二次离子质谱及其I–V特性证实了平面同质结的形成。在77 K光学表征中确定了约5μm的截止波长，并且从直径640μm的反向偏置平面二极管中收集了高达600 nA的光电流。尽管通过X射线衍射显示出结构退化，但仍获得了这些初步结果，我们将退化归因于热退火和扩散前沿后高Zn浓度的协同作用。