Spin Orbit Torque Magnetic RAM (SOT-MRAM) is emerging as a promising memory technology owing to its high endurance, reliability and speed. A critical factor for its success is the development of materials that exhibit efficient conversion of charge current to spin current, characterized by their spin Hall efficiency. In this work, it is experimentally demonstrated that the spin Hall efficiency of the industrially relevant ultra-thin Ta can be enhanced by more than 25× when a monolayer (ML) WSe₂ is inserted as an underlayer. The enhancement is attributed to spin absorption at the Ta/WSe₂ interface, suggested by harmonic Hall measurements. The presented hybrid spin Hall stack with a 2D WSe₂ underlayer has a total body thickness of less than 2 nm and exhibits greatly enhanced spin Hall efficiency, which makes this hybrid a promising candidate for energy efficient SOT-MRAM.

自旋轨道扭矩磁性RAM（SOT-MRAM）由于其高耐久性，可靠性和速度而成为一种有前途的存储技术。其成功的关键因素是开发出能够将充电电流有效转换为自旋电流的材料，其材料具有自旋霍尔效率。在这项工作中，实验证明，当插入单层（ML）WSe ₂作为底层时，工业上相关的超薄Ta的自旋霍尔效率可以提高25倍以上。增强归因于谐波霍尔测量结果表明，Ta / WSe ₂界面处的自旋吸收。提出的带有₂ WSE _2的混合自旋霍尔堆栈 底层的整体厚度小于2 nm，自旋霍尔效率大大提高，这使其成为节能SOT-MRAM的有希望的候选者。