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Superconducting Proximity Effect in InAsSb Surface Quantum Wells with In Situ Al Contacts
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-06-23 , DOI: 10.1021/acsaelm.0c00269 William Mayer 1 , William F. Schiela 1 , Joseph Yuan 1 , Mehdi Hatefipour 1 , Wendy L. Sarney 2 , Stefan P. Svensson 2 , Asher C. Leff 2 , Tiago Campos 3 , Kaushini S. Wickramasinghe 1 , Matthieu C. Dartiailh 1 , Igor Žutić 3 , Javad Shabani 1
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-06-23 , DOI: 10.1021/acsaelm.0c00269 William Mayer 1 , William F. Schiela 1 , Joseph Yuan 1 , Mehdi Hatefipour 1 , Wendy L. Sarney 2 , Stefan P. Svensson 2 , Asher C. Leff 2 , Tiago Campos 3 , Kaushini S. Wickramasinghe 1 , Matthieu C. Dartiailh 1 , Igor Žutić 3 , Javad Shabani 1
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We demonstrate a robust superconducting proximity effect in InAs0.5Sb0.5 quantum wells grown with epitaxial Al contacts, which has important implications for mesoscopic and topological superconductivity. Unlike more commonly studied InAs and InSb semiconductors, bulk InAs0.5Sb0.5 supports stronger spin–orbit coupling and a larger g-factor. However, these potentially desirable properties have not been previously measured in epitaxial heterostructures with superconductors, which could serve as a platform for fault-tolerant topological quantum computing. Through structural and transport characterization, we observe high-quality interfaces and a strong spin–orbit coupling. We fabricate Josephson junctions based on InAs0.5Sb0.5 quantum wells and observe a strong proximity effect. With a contact separation of 500 nm, these junctions exhibit products IcRN = 270 μV and IexRN = 230 μV of normal resistance RN, critical current Ic, and excess current Iex. Both of these quantities demonstrate a robust and long-range proximity effect with highly transparent contacts.
中文翻译：
具有原位Al接触的InAsSb表面量子阱中的超导邻近效应
我们证明了在与外延Al接触生长的InAs 0.5 Sb 0.5量子阱中的鲁棒超导邻近效应，这对介观和拓扑超导具有重要意义。与更常用的InAs和InSb半导体不同，块状InAs 0.5 Sb 0.5支持更强的自旋轨道耦合和更大的g-因子。但是，这些潜在的理想特性以前尚未在具有超导体的外延异质结构中进行测量，这些结构可以用作容错拓扑量子计算的平台。通过结构和传输特性，我们观察到高质量的界面和强自旋轨道耦合。我们基于InAs 0.5 Sb 0.5量子阱制造约瑟夫森结，并观察到很强的邻近效应。接触间隔为500 nm时，这些结的乘积I c R N = 270μV，I ex R N = 230μV，是正常电阻R N，临界电流I c和过剩电流I ex。这两个数量都展示了具有高度透明触点的强大且远距离的接近效果。
更新日期：2020-08-25
中文翻译：
具有原位Al接触的InAsSb表面量子阱中的超导邻近效应
我们证明了在与外延Al接触生长的InAs 0.5 Sb 0.5量子阱中的鲁棒超导邻近效应，这对介观和拓扑超导具有重要意义。与更常用的InAs和InSb半导体不同，块状InAs 0.5 Sb 0.5支持更强的自旋轨道耦合和更大的g-因子。但是，这些潜在的理想特性以前尚未在具有超导体的外延异质结构中进行测量，这些结构可以用作容错拓扑量子计算的平台。通过结构和传输特性，我们观察到高质量的界面和强自旋轨道耦合。我们基于InAs 0.5 Sb 0.5量子阱制造约瑟夫森结，并观察到很强的邻近效应。接触间隔为500 nm时，这些结的乘积I c R N = 270μV，I ex R N = 230μV，是正常电阻R N，临界电流I c和过剩电流I ex。这两个数量都展示了具有高度透明触点的强大且远距离的接近效果。
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