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Negative Ion Formation by Thermal Surface Ionization of Sulfur Dioxide.
ChemPhysChem ( IF 2.3 ) Pub Date : 2020-07-14 , DOI: 10.1002/cphc.202000388
Karolina Marciszuk 1 , Tomasz Pieńkos 1 , Patryk Gontarz 1 , Andrzej Pelc 1
Affiliation  

The generation of negative ions from SO2 in the gas phase was studied using the thermal surface ionization method. Six anion types were measured: O, S, SO, and SO2 and anions with m/z=96 and m/z=128. The most abundant anion formed was S and the formation routes are discussed for each of the six anions. O, S, and SO are formed via dissociative electron attachment to the molecule, whereas the generation of SO2 and anions with m/z=96 and m/z=128 are probably associated with the formation of H2SO4 in the gas inlet system and the ion source. Using statistical thermodynamics the dissociation temperatures of SO2 and SO in the gas phase are calculated and values of above 1800 °C are obtained for both molecules. We also estimated the optimal filament temperatures for the formation of all anions measured, indicating that for SO2 the optimal temperature is related to the electron affinity of the molecules: the optimal temperature increases with decreasing value of the electron affinity for the molecule corresponding to the respective anion.

中文翻译:

通过二氧化硫的热表面电离形成负离子。

使用热表面电离方法研究了气相中SO 2产生负离子的过程。测量六个阴离子类型:o -,S -,SO - ,和SO 2 -和阴离子具有m / z = 96和m / z = 128。形成的最丰富的阴离子为S- 并讨论了六种阴离子的形成途径。ø -,S - ,和SO -通过离解性电子附着到分子形成,而的SO生成2 -和与阴离子M / Z = 96和m / z = 128可能与H的形成相关的2 SO 4在进气系统和离子源中。使用统计热力学计算气相中SO 2和SO的解离温度,两个分子均获得高于1800°C的值。我们还估算了所有测得的阴离子形成的最佳灯丝温度,这表明对于SO 2而言,最佳温度与分子的电子亲和力有关:最佳温度随着分子对电子的亲和力值的降低而增加,对应于各自的阴离子。
更新日期:2020-07-14
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