Negative Ion Formation by Thermal Surface Ionization of Sulfur Dioxide.,ChemPhysChem

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Negative Ion Formation by Thermal Surface Ionization of Sulfur Dioxide.
ChemPhysChem ( IF 2.3 ) Pub Date : 2020-07-14 , DOI: 10.1002/cphc.202000388
Karolina Marciszuk ₁ , Tomasz Pieńkos ₁ , Patryk Gontarz ₁ , Andrzej Pelc ₁

Affiliation

The generation of negative ions from SO₂ in the gas phase was studied using the thermal surface ionization method. Six anion types were measured: O⁻, S⁻, SO⁻, and SO₂⁻ and anions with m/z=96 and m/z=128. The most abundant anion formed was S⁻ and the formation routes are discussed for each of the six anions. O⁻, S⁻, and SO⁻ are formed via dissociative electron attachment to the molecule, whereas the generation of SO₂⁻ and anions with m/z=96 and m/z=128 are probably associated with the formation of H₂SO₄ in the gas inlet system and the ion source. Using statistical thermodynamics the dissociation temperatures of SO₂ and SO in the gas phase are calculated and values of above 1800 °C are obtained for both molecules. We also estimated the optimal filament temperatures for the formation of all anions measured, indicating that for SO₂ the optimal temperature is related to the electron affinity of the molecules: the optimal temperature increases with decreasing value of the electron affinity for the molecule corresponding to the respective anion.

中文翻译：

通过二氧化硫的热表面电离形成负离子。

使用热表面电离方法研究了气相中SO ₂产生负离子的过程。测量六个阴离子类型：o ^-，S ^-，SO ^-，和SO ₂^-和阴离子具有m / z = 96和m / z = 128。形成的最丰富的阴离子为S- ^，并讨论了六种阴离子的形成途径。ø ^-，S ^-，和SO ^-通过离解性电子附着到分子形成，而的SO生成₂^-和与阴离子M / Z = 96和m / z = 128可能与H的形成相关的₂ SO ₄在进气系统和离子源中。使用统计热力学计算气相中SO ₂和SO的解离温度，两个分子均获得高于1800°C的值。我们还估算了所有测得的阴离子形成的最佳灯丝温度，这表明对于SO _2而言，最佳温度与分子的电子亲和力有关：最佳温度随着分子对电子的亲和力值的降低而增加，对应于各自的阴离子。

更新日期：2020-07-14

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