Resistive switching memory devices are emerging class of non-volatile-memories and have shown outstanding device performance originates from the migration of oxygen vacancies. Research efforts are made to enhance the resistive switching behavior of devices using electrical and thermal stimuli, for example. Here we report optically modulated resistive switching behavior in Pt/TiO₂/Al structure at low operating voltages. Highly stable unipolar resistive switching behavior with long retention of the resistance states (in the order of 10⁴ min) and stable endurance (for > 300 cycles) is reported. Interestingly, the operating voltages of structure were observed to shift towards lower voltage side under optical illumination, which indicates that photo generated charge carriers play an important role. The present finding demonstrates the possible utilization of photo-responsive materials in manufacturing non-volatile memory device for future high-performance information storage and computing applications.

电阻式开关存储设备是新兴的非易失性存储类别，其出色的设备性能源自氧空位的迁移。例如，已经进行了研究努力以增强使用电和热刺激的设备的电阻切换行为。在这里，我们报告在低工作电压下Pt / TiO ₂ / Al结构中的光调制电阻切换行为。高度稳定的单极电阻切换行为，并具有长期保持的电阻状态（约为10 ⁴ 分钟）和稳定的耐力（> 300次循环）。有趣的是，观察到结构的工作电压在光学照明下向低压侧移动，这表明光生电荷载流子起着重要的作用。本发现证明了光响应材料在制造非易失性存储设备中用于未来高性能信息存储和计算应用的可能用途。