Single crystalline W (tungsten) samples irradiated at 633, 963 and 1073 K by neutrons to a damage level of 0.1 dpa were exposed to a high-flux D (deuterium) plasma at 673, 873 and 973 K, respectively, in TPE (Tritium Plasma Experiment) at INL (Idaho National Laboratory). Deuterium desorption was analyzed by TDS (Thermal Desorption Spectroscopy), and D depth profiles were determined by NRA (Nuclear Reaction Analysis) at SNL (Sandia National Laboratories). HIDT (Hydrogen Isotope Diffusion and Trapping) simulation code was applied to evaluate D behavior for neutron-damaged W at higher temperature.

The D retention at depths up to 3 μm for the neutron-damaged sample at 673 K was two orders of magnitude larger than that for undamaged tungsten, and its D desorption spectrum had a single broad stage at around 900 K. As the neutron irradiation/plasma exposure temperature increased, D retention was largely reduced, and the desorption temperature was shifted to higher temperatures above 1100 K. The D depth profiles by NRA also showed D migration toward bulk by higher temperature irradiation, compared to undamaged W.

The HIDT simulation indicated that the major binding energy of D was changed from 1.43 eV to 2.07 eV at higher neutron irradiation and plasma exposure temperatures, suggesting that some vacancies and small vacancy clusters would aggregate to form larger voids, or depopulation of weak traps at high D plasma exposure temperatures. It can be said that more stable trapping sites played dominant roles in the D retention at higher neutron irradiation and plasma exposure temperature. The binding energy by HIDT simulation was almost consistent with the reported value by TMAP, but the consideration of not only total D retention measured by TDS but also D depth profile by NRA led to the more accurate D behavior in neutron-damaged W.

中子分别在633、963和1073 K下对钨的单晶W（钨）样品造成的损伤水平为0.1 dpa，在TPE（Tritium）中分别在673、873和973 K下暴露于高通量D（氘）等离子体中等离子实验）（位于爱达荷州国家实验室）。通过TDS（热脱附光谱法）分析氘解吸，并通过SNL（Sandia国家实验室）的NRA（核反应分析）确定D深度分布。使用HIDT（氢同位素扩散和俘获）模拟代码来评估高温下中子损坏W的D行为。

对于中子损坏的样品，在673 K处，深度达3μm时的D保留量比未损坏的钨的D保留量大两个数量级，并且D的解吸光谱在900 K处具有一个宽广的阶段。等离子体暴露温度升高，D保留量大大降低，并且解吸温度转移到1100 K以上的更高温度。与未损坏的W相比，NRA的D深度分布图还显示了D在高温辐射下向本体迁移。

HIDT模拟表明，在较高的中子辐照和等离子体暴露温度下，D的主要结合能从1.43 eV变为2.07 eV，这表明一些空位和小的空位团簇会聚集形成较大的空隙，或在高温度下释放弱的陷阱D等离子暴露温度。可以说，在更高的中子辐照和等离子体暴露温度下，更稳定的俘获位点在D保留中起主要作用。HIDT模拟的结合能几乎与TMAP报道的值一致，但不仅考虑了TDS测得的总D保留量，而且NRA测得的D深度分布图也使中子损伤W的D行为更为精确。