Bulk samples of compositions x(Bi₂O₃)-(0.5-x)(B₂O₃)-0.5(TeO₂) with x = 0.05, 0.1, 0.2, 0.3 and 0.4 are prepared using melt quenching technique The IR absorbance revealed that at x = 0.05 the network is mainly constituted by [BiO₃] and [BiO₅], [BO₃] trigonal pyramid and [BO₄] tetrahedron, [TeO₄] trigonal bipyramidal and [TeO₃] trigonal pyramid structural units. Increasing Bi₂O₃ content over 0.05 transforms [BO₄] to [BO₃], [TeO₃] to [TeO₄] and [BiO₃] into [BiO₅]. The calculated ratio of BO₄ in the structural network showed a decrease against the increase in Bi₂O₃which is explained according to the density of bridging and non-bridging oxygen defects. Temperature dependent capacitance-frequency measurements showed relaxation peaks which argued to the non-bridging Oxygen hole centers (NBOHC) trap defects. The emission rate of these NBOHC defects appeared that its energy states are located as deep levels with respect to the conduction band edge.

 使用熔融猝灭技术制备具有x = 0.05、0.1、0.2、0.3和0.4的x（Bi ₂ O ₃）-（0.5-x）（B ₂ O ₃）-0.5（TeO ₂）组成的块状样品。揭示在x  = 0.05时，网络主要由[BiO ₃ ]和[BiO ₅ ]，[BO ₃ ]三角金字塔和[BO ₄ ]四面体，[TeO ₄ ]三角双锥体和[TeO ₃ ]三角金字塔结构单元组成。Bi ₂ O ₃含量增加超过0.05会将[BO ₄ ]转换为[BO₃ [TeO ₃ ]〜[TeO ₄ ]，[BiO ₃ ]变为[BiO ₅ ]。相对于Bi ₂ O ₃的增加，结构网络中BO ₄的计算比率显示出减少，这是根据桥接和非桥接氧缺陷的密度来解释的。温度相关的电容频率测量显示出弛豫峰，这表明了非桥接的氧空穴中心（NBOHC）阱陷阱缺陷。这些NBOHC缺陷的发射速率似乎是其能量状态相对于导带边缘位于较深的水平。