Journal of Advanced Research ( IF 11.4 ) Pub Date : 2020-06-23 , DOI: 10.1016/j.jare.2020.06.016 Tie Yang 1 , Zhenxiang Cheng 2 , Xiaotian Wang 1 , Xiao-Lin Wang 2
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Introduction
Spin gapless semiconductors (SGSs) and nodal ring states (NRSs) have aroused great scientific interest in recent years due to their unique electronic properties and high application potential in the field of spintronics and magnetoelectronics.
Objectives
Since their advent, all SGSs and NRSs have been predicted in independent materials. In this work, we proposed a novel type of material, nodal ring spin gapless semiconductor (NRSGS), which combines both states of the SGSs and NRSs.
Methods
The synthesized material Mg2VO4 has been detailed with band structure analysis based on first principle calculations.
Results
Obtained results revealed that there are gapless crossings in the spin-up direction, which are from multiple topological nodal rings located exactly at the Fermi energy level. Mg2VO4 combines the advantages inherited from both NRSs and SGSs in terms of the innumerable gapless points along multiple nodal rings with all linear dispersions and direct contacts. In addition, Mg2VO4 also shows strong robustness against both the spin orbit coupling effect and strain conditions.
Conclusion
For the first time, we propose the concept of an NRSGS, and the first such material candidate Mg2VO4 can immediately advance corresponding experimental measurements and even facilitate real applications.
中文翻译：
节环自旋无隙半导体：自旋电子材料新成员
介绍
自旋无隙半导体（SGS）和节环态（NRS）由于其独特的电子特性以及在自旋电子学和磁电子学领域的巨大应用潜力，近年来引起了人们极大的科学兴趣。
目标
自出现以来，所有 SGS 和 NRS 均以独立材料进行预测。在这项工作中，我们提出了一种新型材料：节环自旋无隙半导体（NRSGS），它结合了 SGS 和 NRS 的两种状态。
方法
合成材料Mg 2 VO 4已通过基于第一原理计算的能带结构分析进行了详细描述。
结果
所得结果表明，在自旋向上方向上存在无间隙交叉，这些交叉来自恰好位于费米能级的多个拓扑节点环。 Mg 2 VO 4结合了从NRS和SGS继承的优点，即沿着多个节环的无数无间隙点以及所有线性色散和直接接触。此外，Mg 2 VO 4对自旋轨道耦合效应和应变条件也表现出很强的鲁棒性。
结论
我们首次提出NRSGS的概念，并且第一个此类候选材料Mg2VO4可以立即推进相应的实验测量，甚至促进实际应用。
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