Abstract Improvements in strike point control enabled tests with the new small angle slot (SAS) divertor installed at DIII-D with precision as tight as ± 1 mm, barring brief perturbations from ELMs. Aside from being narrower than previous baffle structures in DIII-D, simulations indicate that performance of the SAS divertor should be very sensitive to strike point position, making the improved strike point control essential for experiments with the SAS divertor. Improved control entails regulating more divertor geometry target locations than before and setting higher gain on the strike point target. This is achieved by tasking more poloidal field (PF) shaping coils with divertor topology control, fine tuning of the coil configuration and algorithm gains, and adding regulation of the power supply common rail. The result is that although more variables are controlled, precision is better: high frequency jitter in the strike point position is lower on average compared to related discharges with standard divertor shape control.

中文翻译：

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高精度打击点控制支持 DIII-D 小角度槽偏滤器中的实验


摘要 撞击点控制的改进使得能够使用安装在 DIII-D 的新型小角度槽 (SAS) 偏滤器进行测试，精度可达 ± 1 毫米，排除 ELM 的短暂扰动。除了比 DIII-D 中以前的挡板结构更窄之外，模拟表明 SAS 偏滤器的性能对撞击点位置非常敏感，这使得改进的撞击点控制对于 SAS 偏滤器的实验至关重要。改进的控制需要比以前调节更多的偏滤器几何目标位置，并在打击点目标上设置更高的增益。这是通过分配更多的极向场 (PF) 整形线圈与偏滤器拓扑控制、线圈配置和算法增益的微调以及增加电源共轨的调节来实现的。结果是，虽然控制的变量更多，但精度更好：与标准偏滤器形状控制的相关放电相比，冲击点位置的高频抖动平均较低。