Abstract

The results of studies on fast-neutron detectors application of homoepitaxial Me–p^––p⁺ structures are reported. Epitaxial boron doped (N_A = (4–8) × 10¹⁴ cm^–3) layers 65 μm thick were grown on highly boron doped HPHT diamond plates by CVD. The Schottky contact on epitaxial layer with 17 mm² area was fabricated by 30 nm Pt deposition. The Ti(30 nm)/Pt(30 nm)/Au(50 nm) metallization scheme was used as an ohmic contact on the backside of the p⁺ HPHT diamond plate. The fast-neutron detection efficiency measured on ²⁴¹Am–Be source at operational bias of 75 V (the depletion region is 10.6 µm) amounted to 6 × 10^–5 puls./neutron.

中文翻译：

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金刚石同质外延Me – p – – p +结构的直接快速中子检测

摘要

报道了同质外延Me – p ^– – p ⁺结构在快速中子探测器上的研究结果。通过CVD在高度硼掺杂的HPHT金刚石板上生长65μm厚的掺硼外延层（N _A =（4–8）×10 ¹⁴ cm ^–3）。通过30nm的Pt沉积在面积为17mm ^2的外延层上形成肖特基接触。Ti（30 nm）/ Pt（30 nm）/ Au（50 nm）金属化方案用作p ⁺ HPHT金刚石板背面的欧姆接触。在^241上测得的快速中子探测效率工作偏压为75 V（耗尽区为10.6 µm）的Am–Be源为6×10 ^–5 puls./中子。