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High dielectric response of (Pb 0.89 Ba 0.08 La 0.02 )(Zr 0.50 Sn 0.40 Ti 0.10 )O 3 multi-layer antiferroelectric ceramics
Journal of Materials Science: Materials in Electronics ( IF 2.8 ) Pub Date : 2020-05-26 , DOI: 10.1007/s10854-020-03627-w
Xiucai Wang , Jianwen Chen , Xinmei Yu , Wenbo Zhu , Yewen Jiang , Yun Fan , Zhikui Duan

(Pb0.89Ba0.08La0.02)(Zr0.50Sn0.40Ti0.10)O3 multi-layer antiferroelectric ceramics with uniform and dense microstructure were fabricated by a rolling process. The nature of AFE was proved by the double hysteresis loops and the double-butterfly C–V curves. High dielectric tunability was observed at low electric flied, as high as 24% at 11 kV/cm, or 2% per kV/cm, together with low dielectric loss. The results demonstrated that the rolling process is a feasible approach to fabricate multi-layer ceramics, and the multi-layer ceramics had a promising potential in tunable devices.



中文翻译:

(Pb 0.89 Ba 0.08 La 0.02)(Zr 0.50 Sn 0.40 Ti 0.10)O 3多层反铁电陶瓷的高介电响应

通过轧制工艺制备了(Pb 0.89 Ba 0.08 La 0.02)(Zr 0.50 Sn 0.40 Ti 0.10)O 3具有均匀致密组织的多层反铁电陶瓷。双磁滞回线和双蝴蝶C–V曲线证明了AFE的性质。在低电漂移下观察到高介电可调性,在11 kV / cm时高达24%,或每kV / cm 2%,以及低介电损耗。结果表明,轧制工艺是制造多层陶瓷的可行方法,并且多层陶瓷在可调器件中具有广阔的应用前景。

更新日期:2020-06-23
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