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Carrier selective solution processed molybdenum oxide silicon heterojunctions solar cells with over 12% efficiency
Semiconductor Science and Technology ( IF 1.9 ) Pub Date : 2020-06-21 , DOI: 10.1088/1361-6641/ab8c29
Chenjin Lu , Rusli Rusli , Ari Bimo Prakoso , Hong Wang

We have fabricated and characterized the performance of carrier selective molybdenum oxide (MoO x )/n-Si heterojunction solar cells (HSCs), with the MoO x prepared by both E-beam evaporation (e-MoO x ) and solution process (s-MoO x ) techniques. The s-MoO x /Si HSC demonstrates the best power conversion efficiency of 12.5 %, with an open circuit voltage of 555 mV, short circuit current density of 33.3 mA cm −2 , and fill factor of 67.4% and it is higher than the efficiencies reported to date for s-MoO x /Si HSC. The efficiency achieved is approaching the 13.3% obtained for the e-MoO x /Si HSC. The slightly lower efficiency of s-MoO x /Si HSC is attributed to its carrier extraction loss arising from a higher contact resistivity at the MoO x /n-Si interface. This is also reflected in the selectivity of the contacts, which measures 10.1 for the s-MoO x contact, relative to 11.5 for ...

中文翻译:

载流子选择性溶液处理的氧化钼硅异质结太阳能电池的效率超过12%

我们已经制造并表征了载流子选择性氧化钼(MoO x)/ n-Si异质结太阳能电池(HSCs)的性能,并通过电子束蒸发(e-MoO x)和固溶过程(s- MoO x)技术。s-MoO x / Si HSC的最佳功率转换效率为12.5%,开路电压为555 mV,短路电流密度为33.3 mA cm -2,填充系数为67.4%,高于迄今为止报道的s-MoO x / Si HSC效率。对于e-MoO x / Si HSC,获得的效率接近获得的13.3%。s-MoO x / Si HSC的效率稍低,归因于其在MoO x / n-Si界面处较高的接触电阻率引起的载流子提取损失。这也反映在触点的选择性上,该度量为10。
更新日期:2020-06-23
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