A set of samples based on InGaN/GaN multiple quantum well (QW) structures with an extremely thick active region and high QW numbers was prepared on different substrates by metal organic vapor phase epitaxy. Their morphology was studied by SEM images, and their optical properties, including photoluminescence (PL) excitation, PL emission spectra, and PL decay curves, were measured by means of time-resolved luminescence spectroscopy. The obtained spectral features were tentatively explained by using the band scheme, which is commonly used for the description of InGaN/GaN multiple QW (MQW) structures. The application potential in the field of nanoscintillators used for fast timing of studied structures is discussed as well.

中文翻译：

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在 GaN 和蓝宝石衬底上生长的 InGaN/GaN 多量子阱结构的光学特性

通过金属有机气相外延在不同衬底上制备了一组基于 InGaN/GaN 多量子阱 (QW) 结构的样品，该结构具有极厚的有源区和高 QW 数。通过 SEM 图像研究它们的形态，并通过时间分辨发光光谱测量它们的光学特性，包括光致发光 (PL) 激发、PL 发射光谱和 PL 衰减曲线。所获得的光谱特征通过能带方案进行了初步解释，该方案常用于描述 InGaN/GaN 多 QW (MQW) 结构。还讨论了纳米闪烁体领域的应用潜力，用于研究结构的快速计时。