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Composite scintillators based on the films and crystals of (Lu,Gd,La)2Si2O7 pyrosilicates
IEEE Transactions on Nuclear Science ( IF 1.9 ) Pub Date : 2020-06-01 , DOI: 10.1109/tns.2020.2983657
S. Kurosawa , A. Yoshikawa , V. Gorbenko , T. Zorenko , S. Witkiewicz-Lukaszek , A. Fedorov , Yu. Zorenko

This article is directed on the creation of composite scintillators which are based on the films and crystals of R2Si2O7:Ce (R = Lu, Gd, La) pyrosilicates using the liquid phase epitaxy (LPE) growth method for application in the radiation monitoring of different components of mixed ionization fluxes. Such types of composite scintillators are epitaxial structures containing film scintillators grown by the LPE method onto the substrates of crystal scintillators. In this article, the film and crystal parts of the composite scintillators were fabricated from effective scintillation materials on the base of Ce3+ doped Gd2-xLuxSi2O7 and Gd2-xLaxSi2O7, and $x = {0}$ and 0.25 mixed pyrosilicates with various scintillation decay kinetics due to the different Lu/Gd/La cation content. We briefly report on the results of the LPE growth of the composite scintillators based on the Ce3+ doped (Lu,Gd)2Si2O7 films and (Gd,La)2Si2O7:Ce crystal substrates, as well as the results of investigation of their luminescent and scintillation properties.

中文翻译:

基于(Lu,Gd,La)2Si2O7焦硅酸盐薄膜和晶体的复合闪烁体

本文旨在创建基于 R 2 Si 2 O 7 :Ce (R = Lu, Gd, La) 焦硅酸盐的薄膜和晶体的复合闪烁体,使用液相外延 (LPE) 生长方法应用于混合电离通量不同成分的辐射监测。这种类型的复合闪烁体是包含通过LPE方法生长到晶体闪烁体基板上的薄膜闪烁体的外延结构。本文以Ce 3+掺杂Gd 2-为基础,采用高效的闪烁材料制备复合闪烁体的薄膜和晶体部分。XXSi 2 O 7和Gd 2-XXSi 2 O 7,和 $x = {0}$ 由于不同的 Lu/Gd/La 阳离子含量,0.25 混合焦硅酸盐具有不同的闪烁衰减动力学。我们简要报告了基于 Ce 3+掺杂 (Lu,Gd) 2 Si 2 O 7薄膜和 (Gd,La) 2 Si 2 O 7 :Ce 晶体衬底的复合闪烁体的 LPE 生长结果作为研究它们的发光和闪烁特性的结果。
更新日期:2020-06-01
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