In this work, we investigated the effects of the crystal phase of ZrO₂ on charge trapping memtransistors (CTMTs) as synaptic devices for neural network applications. The ZrO₂ deposited through thermal (t-ZrO₂) atomic layer deposition (ALD) and plasma (p-ZrO₂) ALD were analyzed using an X-ray diffractometer, which indicated that the t-ZrO₂ consisted of pure cubic phase, whereas p-ZrO₂ consisted of both cubic and tetragonal phases. Through X-ray photoelectron spectroscopy analysis, we then constructed the energy band diagram of the gate stacks. The $\Delta \mathrm E_{C}$ of t- and p-ZrO₂ with respect to tunneling and blocking Al₂O₃ were 1.84 and 1.19 eV respectively. Because of the relatively large $\Delta \text{E}_{\mathrm{ C}}$ of t-ZrO₂, the window of the flat band voltage ( $\text{V}_{\mathrm{ FB}}$ ) shift extracted from charge trapping capacitors was enlarged by 591.9 mV more than the one using p-ZrO₂ as the charge trapping layer. Retention was also improved by 10.4% after $10^{5}$ s in the t-ZrO₂ case. Finally, we fabricated the CTMTs with the gate stack of the t-ZrO₂ case and demonstrated their characteristics as synaptic devices. With the optimization of pulse schemes, we reduced the nonlinear factors of depression ( ${\alpha } _{\mathrm{ d}}$ ) and potentiation ( ${\alpha } _{\mathrm{ p}}$ ) from −6.72 and 6.47 to 0.03 and 0.01 respectively, enlarged the ON/OFF ratio from 15.6 to 70.4 and increased the recognition accuracy from 27.6% to 86.5% simultaneously.

中文翻译：

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ZrO2 晶相对作为神经网络应用突触器件的电荷捕获忆阻器的影响

在这项工作中，我们研究了 ZrO ₂的晶相对作为神经网络应用的突触器件的电荷俘获记忆晶体管 (CTMT) 的影响。所述的ZrO ₂通过热（叔的ZrO沉积₂）原子层沉积（ALD）和等离子体（P-的ZrO ₂使用X射线衍射仪，这表明T-的ZrO）ALD进行分析₂由纯立方相，而p-ZrO ₂由立方相和四方相组成。通过X射线光电子能谱分析，我们构建了栅叠层的能带图。这 $\Delta \mathrm E_{C}$ t-和p-ZrO _{2 的}隧穿和阻挡Al ₂ O ₃分别为1.84和1.19 eV。由于相对较大 $\Delta \text{E}_{\mathrm{ C}}$ t-ZrO ₂的平带电压窗口 ( $\text{V}_{\mathrm{ FB}}$ ) 从电荷俘获电容器中提取的偏移比使用 p-ZrO ₂作为电荷俘获层的偏移扩大了 591.9 mV 。留存率也提高了 10.4% $10^{5}$ s 在 t-ZrO ₂情况下。最后，我们制造了具有 t-ZrO ₂情况下的栅极堆叠的 CTMT，并展示了它们作为突触器件的特性。随着脉冲方案的优化，我们减少了抑郁症的非线性因素（ ${\alpha } _{\mathrm{ d}}$ ) 和增强 ( ${\alpha } _{\mathrm{ p}}$ ) 分别从-6.72 和 6.47 增加到 0.03 和 0.01，同时将 ON/OFF 比从 15.6 扩大到 70.4，并将识别准确率从 27.6% 提高到 86.5%。