This paper presents a high-speed ring oscillator (RO) with amorphous Indium-Gallium-Zinc-Oxide Thin-film transistors (a-IGZO TFTs). The proposed RO reduces the delay of a single stage inverter using intermediate signals generated within the RO, hence, improving the speed. To validate the proposed idea, two conventional ROs (with diode-load load inverter and bootstrapped pseudo-CMOS inverter) and the proposed RO were fabricated at a temperature ≤ 180°C. Measured results of the proposed RO have shown a frequency and power-delay-product (PDP) of 173.2 kHz and 0.7 nJ at a supply voltage of 6V. Further, it shows approximately 155% (44%) increase in frequency and 14% (24.5%) decrease in PDP compared to diode-load inverter (bootstrapped pseudo-CMOS inverter) based ROs. Therefore, the proposed RO finds applications in low-voltage and high speed designs for timing signal generation.

中文翻译：

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具有 a-InGaZnO TFT 的低压高速环形振荡器

本文介绍了一种具有非晶铟镓锌氧化物薄膜晶体管 (a-IGZO TFT) 的高速环形振荡器 (RO)。提议的 RO 使用 RO 内生成的中间信号减少了单级逆变器的延迟，从而提高了速度。为了验证所提出的想法，在≤ 180°C 的温度下制造了两个传统 RO（带有二极管负载负载逆变器和自举伪 CMOS 逆变器）和所提议的 RO。所提议的 RO 的测量结果显示，在 6V 电源电压下，频率和功率延迟积 (PDP) 为 173.2 kHz 和 0.7 nJ。此外，与基于二极管负载反相器（自举伪 CMOS 反相器）的 RO 相比，它显示出约 155% (44%) 的频率增加和 14% (24.5%) 的 PDP 减少。所以，