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Modeling a dual-parallel silicon modulator for sinc-shaped Nyquist pulse generation
IEEE Journal of Selected Topics in Quantum Electronics ( IF 4.9 ) Pub Date : 2021-05-01 , DOI: 10.1109/jstqe.2020.2989829
Siqi Liu , Kan Wu , Linjie Zhou , Gangqiang Zhou , Liangjun Lu , Jianping Chen

Sinc-shaped Nyquist pulses have wide applications in optical communications and microwave photonics. The quality of the generated Nyquist pulses has a significant effect on the overall performance of the communication system and the signal processing system. Generating high-quality Nyquist pulses with integrated silicon modulators is however still challenging due to the highly nonlinear response and fabrication-induced discrepancies of the device. We present a model for a silicon dual-parallel modulator with which the best possible quality of the generated optical frequency comb (OFC) and sinc-shaped Nyquist pulses can be obtained. In the model, the phase and amplitude deviations are taken into consideration. Device induced waveform and spectrum distortion can be well described. Based on the guidance of the model, a root-mean-square error of 2.8% is obtained between the experimentally generated signals and the ideal pulses, which proves the high accuracy of the model and its importance for high-quality Nyquist pulse generation.

中文翻译:

为产生正弦形奈奎斯特脉冲的双并联硅调制器建模

Sinc 形奈奎斯特脉冲在光通信和微波光子学中有着广泛的应用。生成的奈奎斯特脉冲的质量对通信系统和信号处理系统的整体性能有显着影响。然而,由于器件的高度非线性响应和制造引起的差异,使用集成硅调制器生成高质量奈奎斯特脉冲仍然具有挑战性。我们提出了一种硅双并行调制器模型,通过该模型可以获得最佳质量的生成光频率梳 (OFC) 和 sinc 形奈奎斯特脉冲。在模型中,考虑了相位和幅度偏差。设备感应波形和频谱失真可以很好地描述。根据模型的指导,均方根误差为 2。
更新日期:2021-05-01
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