A distributed feedback GaAs-based semiconductor laser with a laterally coupled grating is demonstrated at a wavelength of 780.24 nm with up to 60 mW power. A mode expander and aluminum-free active layers have been used to reduce the linewidth to 612 kHz while maintaining high output power. The laser demonstrates over 40 dB side-mode suppression ratio with ${\gt}{0.3}\;{\rm nm}$ of tuning suitable for atom cooling experiments with the D2 ${^{87}{\rm Rb}}$ atomic transition. This laser has substantial potential to be integrated into miniaturized cold atom systems.

中文翻译：

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亚兆赫线宽780.24 nm分布式反馈激光器，用于87Rb应用。

演示了具有横向耦合光栅的基于分布式反馈GaAs的半导体激光器，其波长为780.24 nm，功率高达60 mW。模式扩展器和无铝有​​源层已用于将线宽减小至612 kHz，同时保持高输出功率。激光器在$ {\ gt} {0.3} \; {\ rm nm} $的调谐下展示了超过40 dB的副模抑制比，适用于D2 $ {^ {87} {\ rm Rb}}的原子冷却实验$原子过渡。这种激光器具有集成到小型冷原子系统中的巨大潜力。