In this paper, a novel kind of one-dimensional (1D) photonic crystal (PC) doped with indium antimonide (InSb) is proposed, which is theoretically investigated by the transfer matrix method to create a giant lateral shift that is also called the Goos–Hänchen (GH) shift. The transmittance features of the proposed PCs are ascribed to the temperature. The influences of the incident angle on the transmittance of TE and TM waves have also been studied in the theory. For the TE wave, the transmittance is also affected by magnetic field strength, due to the characteristics of the permittivity of InSb layers. Therefore, for the TE wave, such PCs not only can generate huge positive and negative GH displacements but also can produce some regular changes under the effects of temperature and external magnetic field. The calculated results demonstrate that the normalized positive GH shift can reach around 55 times the wavelength, and the normalized negative one can get to around 182 times the wavelength. When the angle of incidence is large or small, the resulting GH shift will also produce interesting changes. These 1D PCs may provide a theoretical possibility for some devices that detect changes in temperature or magnetic field strength, or may be applied to angle sensors.

中文翻译：

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掺杂InSb的一维光子晶体产生Goos–Hänchen位移

本文提出了一种新型的掺杂锑化铟（InSb）的一维（1D）光子晶体（PC），并通过转移矩阵法对其进行了理论研究，以产生巨大的横向位移，也称为Goos。 –汉琴（GH）转移。所提出的PC的透射率特性归因于温度。理论上还研究了入射角对TE波和TM波透射率的影响。对于TE波，由于InSb层的介电常数的特性，透射率也受到磁场强度的影响。因此，对于TE波，这样的PC不仅会产生巨大的正负GH位移，而且还会在温度和外部磁场的作用下产生一些规律的变化。计算结果表明，归一化正GH偏移可以达到波长的55倍左右，归一化负GH偏移可以达到波长的182倍左右。当入射角较大或较小时，产生的GH偏移也会产生有趣的变化。这些一维PC可以为某些检测温度或磁场强度变化的设备提供理论上的可能性，或者可以应用于角度传感器。