Experimental Optical Properties of Single Nitrogen Vacancy Centers in Silicon Carbide at Room Temperature,ACS Photonics

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Experimental Optical Properties of Single Nitrogen Vacancy Centers in Silicon Carbide at Room Temperature
ACS Photonics ( IF 6.5 ) Pub Date : 2020-06-19 , DOI: 10.1021/acsphotonics.0c00218
Jun-Feng Wang _{1,

2} , Zheng-Hao Liu _{1,

2} , Fei-Fei Yan _{1,

2} , Qiang Li _{1,

2} , Xin-Ge Yang ₁ , Liping Guo ₃ , Xiong Zhou ₃ , Wei Huang ₄ , Jin-Shi Xu _{1,

2} , Chuan-Feng Li _{1,

2} , Guang-Can Guo _{1,

2}

Affiliation

Robust single spin color centers in solid state systems with telecom wavelength emission are vital to quantum photonics and quantum networks. The nitrogen vacancy (NV) centers in silicon carbide (SiC) have become promising platforms for those applications. However, little is known about the detailed optical properties of the NV centers. In this paper, we investigate the photophysics of the single NV centers in 4H-SiC. The results demonstrate that the NV centers comprise three energy-level electronic structures. Particularly, for c-axis NV centers, both the excitation and the emission polarization degrees are larger than 90%. Photon purity and photostability of the single NV centers are maintained at an elevated temperature up to 400 K. These experiments constitute an important step toward using the NV centers in SiC with respect to quantum photonics.

中文翻译：

室温下碳化硅中单个氮空位中心的实验光学性质

具有电信波长发射的固态系统中的坚固的自旋色心对于量子光子学和量子网络至关重要。碳化硅（SiC）中的氮空位（NV）中心已成为这些应用程序的有前途的平台。但是，对于NV中心的详细光学特性知之甚少。在本文中，我们研究了4H-SiC中单个NV中心的光物理性质。结果表明，NV中心包含三个能级电子结构。特别是对于c轴NV中心，激发和发射极化度均大于90％。将单个NV中心的光子纯度和光稳定性保持在高达400 K的高温下。这些实验构成了将SiC的NV中心用于量子光子学的重要一步。

更新日期：2020-07-15

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