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Versatile Triboiontronic Transistor via Proton Conductor.
ACS Nano ( IF 15.8 ) Pub Date : 2020-06-22 , DOI: 10.1021/acsnano.0c03030
Xixi Yang 1, 2, 3 , Jing Han 1, 2 , Jinran Yu 1, 2 , Youhui Chen 1, 2 , Huai Zhang 1, 2 , Mei Ding 4 , Chuankun Jia 4 , Jia Sun 5 , Qijun Sun 1, 2, 6 , Zhong Lin Wang 1, 2, 7
Affiliation  

Iontronics are effective in modulating electrical properties through the electric double layers (EDLs) assisted with ionic migration/arrangement, which are highly promising for unconventional electronics, ionic sensory devices, and flexible interactive interface. Proton conductors with the smallest and most abundant protons (H+) can realize a faster migration/polarization under electric field to form the EDL with higher capacitance. Here, a versatile triboiontronic MoS2 transistor via proton conductor by sophisticated combination of triboelectric modulation and protons migration has been demonstrated. This device utilizes triboelectric potential originated from mechanical displacement to modulate the electrical properties of transistors via protons migration/accumulation. It shows superior electrical properties, including high current on/off ratio over 106, low cutoff current (∼0.04 pA), and steep switching properties (89 μm/dec). Pioneering noise tests are conducted to the tribotronic devices to exclude the possible noise interference introduced by mechanical displacement. The versatile triboiontronic MoS2 transistor via proton conductor has been utilized for mechanical behavior derived logic devices and an artificial sensory neuron system. This work represents the reliable and effective triboelectric potential modulation on electronic transportation through protonic dielectrics, which is highly desired for theoretical study of tribotronic gating, active mechanosensation, self-powered electronic skin, artificial intelligence, etc.

中文翻译:

通过质子导体的多功能Triboiontronic晶体管。

离子电学可有效地通过双电层(EDL)调节电性能,并辅以离子迁移/排列,这对于非常规电子学,离子感测设备和灵活的交互界面非常有希望。具有最小和最丰富质子(H +)的质子导体可以在电场下实现更快的迁移/极化,从而形成具有更高电容的EDL。在这里,通过摩擦电调制和质子迁移的复杂结合,通过质子导体展示了一种多功能的摩擦电子MoS 2晶体管。此装置利用来自机械位移的摩擦电势调节晶体管的电特性通过质子迁移/积累。它显示出卓越的电气特性,包括超过10 6的高电流开/关比,低截止电流(〜0.04 pA)和陡峭的开关特性(89μm/ dec)。对摩擦电子设备进行了开创性的噪声测试,以排除机械位移引起的可能的噪声干扰。通用的Triboiontronic MoS 2晶体管通过质子导体已被用于机械行为派生的逻辑装置和人工感觉神经元系统。这项工作代表了通过质子介电质进行电子传输时可靠而有效的摩擦电势调制,这对于摩擦学选通,主动机械传感,自供电电子皮肤,人工智能等的理论研究是非常需要的。
更新日期:2020-07-28
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