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Voltage Control of Magnetism above Room Temperature in Epitaxial SrCo1-xFexO3-δ.
ACS Nano ( IF 15.8 ) Pub Date : 2020-06-22 , DOI: 10.1021/acsnano.0c03750 Shuai Ning 1 , Qiqi Zhang 2 , Connor Occhialini 3 , Riccardo Comin 3 , Xiaoyan Zhong 2, 4, 5 , Caroline A Ross 1
ACS Nano ( IF 15.8 ) Pub Date : 2020-06-22 , DOI: 10.1021/acsnano.0c03750 Shuai Ning 1 , Qiqi Zhang 2 , Connor Occhialini 3 , Riccardo Comin 3 , Xiaoyan Zhong 2, 4, 5 , Caroline A Ross 1
Affiliation
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Searching for new materials and phenomena to enable voltage control of magnetism and magnetic properties holds compelling interest for the development of low-power nonvolatile memory devices. In particular, reversible and nonvolatile ON/OFF controls of magnetism above room temperature are highly desirable yet still elusive. Here, we report on a nonvolatile voltage control of magnetism in epitaxial SrCo1–xFexO3−δ (SCFO). The substitution of Co with Fe significantly changes the magnetic properties of SCFO. In particular, for the Co/Fe ratio of ∼1:1, a switch between nonmagnetic (OFF) and ferromagnetic (ON) states with a Curie temperature above room temperature is accomplished by ionic liquid gating at ambient conditions with voltages as low as ±2 V, even for films with thickness up to 150 nm. Tuning the oxygen stoichiometry via the polarity and duration of gating enables reversible and continuous control of the magnetization between 0 and 100 emu/cm3 (0.61 μB/f.u.) at room temperature. In addition, SCFO was successfully incorporated into self-assembled two-phase vertically aligned nanocomposites, in which the reversible voltage control of magnetism above room temperature is also attained. The notable structural response of SCFO to ionic liquid gating allows large strain couplings between the two oxides in these nanocomposites, with potential for voltage-controlled and strain-mediated functionality based on couplings between structure, composition, and physical properties.
中文翻译：
外延SrCo1-xFexO3-δ中室温以上磁场的电压控制。
寻找新的材料和现象以实现对磁性和磁性的电压控制使得人们对开发低功耗非易失性存储器件产生了浓厚的兴趣。特别地，非常需要在室温以上的可逆和非易失性的磁性开/关控制，但是仍然难以捉摸。在这里，我们报道了外延SrCo 1– x Fe x O 3−δ中磁性的非易失性电压控制（SCFO）。用Fe替代Co会显着改变SCFO的磁性。特别是，对于Co / Fe比约为1：1的情况，居里温度高于室温的非磁性（OFF）和铁磁性（ON）状态之间的切换是通过在环境条件下以低至± 2 V，即使对于厚度最大为150 nm的薄膜也是如此。调谐氧化学计量经由极性和选通持续时间使得在0到100鸸鹋/厘米之间的磁化的可逆和连续控制3（0.61μ乙/ fu）在室温下。此外，SCFO已成功地结合到自组装的两相垂直排列的纳米复合材料中，其中还实现了室温以上的可逆电压控制。SCFO对离子液体门控的显着结构响应允许这些纳米复合材料中的两种氧化物之间发生较大的应变耦合，并基于结构，组成和物理性质之间的耦合具有潜在的电压控制和应变介导的功能。
更新日期：2020-07-28
中文翻译：
外延SrCo1-xFexO3-δ中室温以上磁场的电压控制。
寻找新的材料和现象以实现对磁性和磁性的电压控制使得人们对开发低功耗非易失性存储器件产生了浓厚的兴趣。特别地，非常需要在室温以上的可逆和非易失性的磁性开/关控制，但是仍然难以捉摸。在这里，我们报道了外延SrCo 1– x Fe x O 3−δ中磁性的非易失性电压控制（SCFO）。用Fe替代Co会显着改变SCFO的磁性。特别是，对于Co / Fe比约为1：1的情况，居里温度高于室温的非磁性（OFF）和铁磁性（ON）状态之间的切换是通过在环境条件下以低至± 2 V，即使对于厚度最大为150 nm的薄膜也是如此。调谐氧化学计量经由极性和选通持续时间使得在0到100鸸鹋/厘米之间的磁化的可逆和连续控制3（0.61μ乙/ fu）在室温下。此外，SCFO已成功地结合到自组装的两相垂直排列的纳米复合材料中，其中还实现了室温以上的可逆电压控制。SCFO对离子液体门控的显着结构响应允许这些纳米复合材料中的两种氧化物之间发生较大的应变耦合，并基于结构，组成和物理性质之间的耦合具有潜在的电压控制和应变介导的功能。
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