In this study, a charge trapping thin-film transistor (TFT) is demonstrated based on a zinc–tin oxide (ZTO) semiconductor channel layer and a stack of AlO_x/AZO nanoparticles/SiO₂ as the gate dielectrics. This device can be switched from the pristine state to the charge trapping state via the application of a positive gate voltage pulse (V_G = 40 V for 1 s). When the TFT is set at the charge trapping state, the dynamic photoresponse (to light in the wavelength of 405 or 635 nm) of drain current gain can be significantly enhanced as compared to that of the device set at the pristine state. As a comparison, the ZTO TFT without the nanoparticulate AZO layer exhibits neither charge trapping nor enhanced photoresponse characteristics. The enhancement in the dynamic photoresponse of the charge trapping TFT is attributed to the increasing number of electrons at the ZTO channel by light-assisted detrapping charges. The methodology used in this study provides a unique approach to achieve photosensitive and photostable duality within a single device.

中文翻译：

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电荷俘获增强的锌氧化锡薄膜晶体管的可切换亚带隙光响应

在这项研究中，展示了一种基于氧化锌锡（ZTO）半导体沟道层和AlO _x / AZO纳米颗粒/ SiO ₂堆叠作为栅极电介质的电荷捕获薄膜晶体管（TFT）。通过施加正栅极电压脉冲（V _G，可以将该器件从原始状态切换到电荷俘获状态= 40 V持续1 s）。当将TFT设置为电荷捕获状态时，与设置为原始状态的设备相比，漏极电流增益的动态光响应（对405或635 nm波长的光）可以得到显着增强。作为比较，没有纳米颗粒AZO层的ZTO TFT既不表现出电荷俘获也不表现出增强的光响应特性。电荷俘获TFT的动态光响应的增强归因于光辅助去俘获电荷在ZTO沟道处电子数量的增加。本研究中使用的方法提供了一种独特的方法，可在单个设备中实现光敏和光稳定的对偶。