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Dissipative Kerr Solitons in a III‐V Microresonator
Laser & Photonics Reviews ( IF 9.8 ) Pub Date : 2020-06-22 , DOI: 10.1002/lpor.202000022 Gregory Moille 1, 2 , Lin Chang 3 , Weiqiang Xie 3 , Ashutosh Rao 1, 4 , Xiyuan Lu 1, 4 , Marcelo Davanço 1 , John E. Bowers 3 , Kartik Srinivasan 1, 2
Laser & Photonics Reviews ( IF 9.8 ) Pub Date : 2020-06-22 , DOI: 10.1002/lpor.202000022 Gregory Moille 1, 2 , Lin Chang 3 , Weiqiang Xie 3 , Ashutosh Rao 1, 4 , Xiyuan Lu 1, 4 , Marcelo Davanço 1 , John E. Bowers 3 , Kartik Srinivasan 1, 2
Affiliation
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Stable microresonator Kerr soliton frequency combs in a III‐V platform (AlGaAs on SiO2) are demonstrated through quenching of thermorefractive effects by cryogenic cooling to temperatures between 4 and 20 K. This cooling reduces the resonator's thermorefractive coefficient, whose room‐temperature value is an order of magnitude larger than that of other microcomb platforms like Si3N4, SiO2, and AlN, by more than two orders of magnitude, and makes soliton states adiabatically accessible. Realizing such phase‐stable soliton operation is critical for applications that fully exploit the ultra‐high effective nonlinearity and high optical quality factors exhibited by this platform.
中文翻译：
III-V型微谐振器中的耗散Kerr孤子
通过低温冷却至4至20 K之间的温度，通过淬灭热折射效应，证明了III-V平台中稳定的微谐振器Kerr孤子频率梳（在SiO 2上的AlGaAs ）。这种冷却降低了谐振器的热折射系数，其室温值为比其他微梳状平台（例如Si 3 N 4，SiO 2和AlN）大一个数量级，超过两个数量级，并使绝热态的孤子态可访问。对于充分利用该平台展现的超高效非线性和高光学品质因数的应用，实现这种相稳定的孤子操作至关重要。
更新日期：2020-06-22
中文翻译：
III-V型微谐振器中的耗散Kerr孤子
通过低温冷却至4至20 K之间的温度，通过淬灭热折射效应，证明了III-V平台中稳定的微谐振器Kerr孤子频率梳（在SiO 2上的AlGaAs ）。这种冷却降低了谐振器的热折射系数，其室温值为比其他微梳状平台（例如Si 3 N 4，SiO 2和AlN）大一个数量级，超过两个数量级，并使绝热态的孤子态可访问。对于充分利用该平台展现的超高效非线性和高光学品质因数的应用，实现这种相稳定的孤子操作至关重要。
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