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Electrically Controllable Terahertz Second‐Harmonic Generation in GaAs
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2020-06-22 , DOI: 10.1002/adom.202000359
Kanghee Lee 1, 2 , Jagang Park 2 , Bong Joo Kang 1 , Won Tae Kim 1 , Hyeon‐Don Kim 2 , Soojeong Baek 2 , Kwang Jun Ahn 3 , Bumki Min 2 , Fabian Rotermund 1
Affiliation  

Terahertz radiation and its nonlinear optical manipulation may possess potential for a variety of applications in next‐generation electronics and optics. Pioneering studies have shown that the nonlinearity of carrier drift in semiconductors and graphene can be utilized for nonlinear optical processes at terahertz frequencies. However, because of the symmetric response of carriers to the terahertz field direction, most experiments have confirmed only the presence of odd‐order nonlinear processes. In this study, electric‐field‐induced terahertz second‐harmonic generation (SHG) in photoexcited gallium arsenide is demonstrated, where an applied bias field breaks the directional symmetry of the drift transport of electrons. The amplitudes of odd‐ and even‐harmonic waves are found to be highly controllable using the bias field. The measured conversion efficiency of SHG reaches beyond 10−5, substantially higher than the value previously reported. This terahertz harmonic generation platform with electrical controllability may be useful for future nonlinear applications at terahertz frequencies.

中文翻译:

GaAs中的电可控太赫兹二次谐波产生

太赫兹辐射及其非线性光学操纵可能在下一代电子和光学器件中具有多种应用潜力。开拓性研究表明,半导体和石墨烯中载流子漂移的非线性可用于太赫兹频率的非线性光学过程。然而,由于载流子对太赫兹场方向的对称响应,大多数实验仅证实了奇数阶非线性过程的存在。在这项研究中,证明了在光激发的砷化镓中电场诱导的太赫兹二次谐波产生(SHG),其中施加的偏置场破坏了电子漂移传输的方向对称性。发现使用偏置场可以很好地控制奇谐波和偶谐波的振幅。-5,大大高于先前报告的值。具有电可控性的太赫兹谐波产生平台可能对将来在太赫兹频率下的非线性应用很有用。
更新日期:2020-06-22
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