当前位置: X-MOL 学术Adv. Funct. Mater. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Energy Level Engineering in Organic Thin Films by Tailored Halogenation
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2020-06-22 , DOI: 10.1002/adfm.202002987
Katrin Ortstein 1 , Sebastian Hutsch 2 , Alexander Hinderhofer 3 , Jörn Vahland 1 , Martin Schwarze 1 , Sebastian Schellhammer 2 , Martin Hodas 3 , Thomas Geiger 4 , Hans Kleemann 1 , Holger F. Bettinger 4 , Frank Schreiber 3 , Frank Ortmann 2 , Karl Leo 1
Affiliation  

In modern electronics, it is essential to adapt band structures by adjusting energy levels and band gaps. At first sight, this “band structure engineering” seems impossible in organic semiconductors, which usually exhibit localized electronic states instead of Bloch bands. However, the strong Coulomb interaction in organic semiconductors allows for a continuous shift of the ionization energy (IE) over a wide range by mixing molecules with halogenated derivatives that exhibit different quadrupole moments. Here, this effect of energy level engineering on blends of pentacene and two fluorinated derivatives, in which the position but not the number of fluorine atoms differ, is studied. Structural investigations confirm that pentacene forms intermixed phases in blends with the fluorinated species. The investigation of electronic properties and simulations reveals a much larger shift of the ionization energy (1.5 eV) than in previous studies, allowing to test this model in a range not investigated so far, and emphasizing the role of the position of the halogen atoms. The tuning effect is preserved in electronic devices such as field‐effect transistors and significantly influences device characteristics.

中文翻译:

量身定制的卤化有机薄膜能级工程

在现代电子学中,通过调节能级和能带隙来适应能带结构至关重要。乍一看,这种“能带结构工程”在有机半导体中似乎是不可能的,有机半导体通常表现出局部电子状态而不是Bloch能带。然而,有机半导体中强大的库仑相互作用通过将分子与表现出不同四极矩的卤代衍生物混合,使电离能(IE)在很宽的范围内连续变化。在这里,研究了能级工程对并五苯和两种氟化衍生物的共混物的影响,在这种共混物中,氟原子的位置不同,但数量不同。结构研究证实并五苯与氟化物形成共混相。电子性质和模拟的研究表明,电离能的位移(1.5 eV)比以前的研究大得多,从而可以在迄今未研究的范围内测试该模型,并强调卤素原子位置的作用。调谐效果在诸如场效应晶体管的电子设备中得以保留,并极大地影响了设备特性。
更新日期:2020-08-08
down
wechat
bug