Gadolinia doped ceria (GDC) films have been deposited using reactive magnetron sputtering and the influence of the deposition parameters on the properties of the films has been investigated. The oxygen flow rate, the target-substrate distance and the radio frequency substrate bias have been varied and films were deposited with a relatively high power-normalized growth rate of 15–18 nm min⁻¹ W⁻¹ cm². Depending on the target-substrate distance and on the oxygen flow rate fully oxidized as-deposited films or sub-stoichiometric films requiring an ex-situ thermal annealing step were obtained. These two manufacturing routes (direct deposition of a fully oxidized compound or post-oxidation of a sub-stoichiometric oxide) lead to different preferential orientations ([200] or [111]) of the final oxide film. This is attributed to the oxygen/metal flux ratio, which is modified according to the experimental configuration and the process parameters. Furthermore, the substrate bias was found to further the [111] orientation and thus playing with this parameter allows a fine tuning of the preferential orientation.

使用反应磁控溅射沉积了掺杂d的二氧化铈（GDC）膜，并研究了沉积参数对膜性能的影响。氧气流速，目标基板距离和射频基板偏置已发生变化，并且以15-18 nm min ^-1 W ^-1 cm ^2的较高功率归一化生长速率沉积膜。取决于目标衬底的距离和氧气的流速，获得了需要异位热退火步骤的完全氧化的沉积膜或亚化学计量膜。这两种制造路线（直接沉积完全氧化的化合物或亚化学计量氧化物的后氧化）导致最终氧化膜的优先取向不同（[200]或[111]）。这归因于氧气/金属通量比，该比例根据实验配置和工艺参数进行了修改。此外，发现衬底偏置进一步使[111]取向，因此使用该参数可以对优先取向进行微调。