Abstract Different thicknesses (2–250 nm) of Cu films were deposited on glass substrate by RF magnetron sputtering in Ar and Ar + H2 atmospheres at room temperature. It is found that crystallinity and conductive properties of the films enhance but visible light transmittance (TVis) decreases with increase of film thickness. Compared with the Cu films deposited in Ar, those deposited in Ar + H2 have higher crystallinity and surface roughness, and they have better conductive properties and higher TVis at film thickness above 5 nm. Overall, the Cu films deposited in Ar and Ar + H2 can be achieved higher figure of merit (FOM) in a thickness range of 3~5 and 5~8.5 nm, respectively. Furthermore, the higher FOM values of Cu film deposited in Ar + H2 atmosphere are higher than those of Cu film deposited in Ar atmosphere. The correlation between the improvement of transparent conductive properties of Cu films and modification of film microstructure due to introduction of H2 into deposition atmosphere is discussed.

中文翻译：

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在射频磁控溅射过程中通过在沉积气氛中引入 H2 来改善 Cu 薄膜的透明导电性能

摘要 在室温下，在 Ar 和 Ar + H2 气氛中，通过射频磁控溅射在玻璃基板上沉积不同厚度（2-250 nm）的 Cu 膜。发现薄膜的结晶度和导电性能随着薄膜厚度的增加而增强，但可见光透射率（TVis）降低。与在Ar中沉积的Cu薄膜相比，在Ar+H2中沉积的Cu薄膜具有更高的结晶度和表面粗糙度，并且在5nm以上的膜厚下具有更好的导电性能和更高的TVis。总体而言，在 Ar 和 Ar + H2 中沉积的 Cu 膜可以分别在 3~5 和 5~8.5 nm 的厚度范围内实现更高的品质因数（FOM）。此外，在Ar + H2 气氛中沉积的Cu 膜的FOM 值高于在Ar 气氛中沉积的Cu 膜的FOM 值。