Abstract Here we report a certified efficiency of up to 25.11% for silicon heterojunction (SHJ) solar cells on a full size n-type M2 monocrystalline-silicon (c-Si) wafer (total area, 244.5 cm2). An ultra-thin intrinsic a-Si:H buffer layer was introduced on the c-Si wafer surface using a 13.56 MHz home-made RF-PECVD with low deposition rate showing superior surface passivation. The ultra-thin i-a-Si:H film with both higher microstructure factor (R*) and H content evidently increases the SHJ solar cell open-circuit voltage (VOC) by 2 mV, and moreover, short-circuit current (ISC) and fill factor (FF) are also notably improved, resulting in a 0.52% absolute cell efficiency enhancement, in which FF is the main cause. In order to explore high conversion efficiency SHJ solar cells, both home-made RF-PECVD and commercial VHF-PECVD (40.68 MHz) are employed for deposition of the i-a-Si:H passivation layer. As a result, the efficiency of RF-PECVD-prepared SHJ cell is 0.21% higher than that of VHF-PECVD-prepared, mainly driven by VOC and ISC boost. This work offers a useful tool for fabrication of high performance SHJ solar cells which could be employed in mass production.

中文翻译：

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25.11% 效率的硅异质结太阳能电池，具有低沉积率本征非晶硅缓冲层

摘要 在这里，我们报告了全尺寸 n 型 M2 单晶硅 (c-Si) 晶片（总面积，244.5 cm2）上的硅异质结 (SHJ) 太阳能电池的认证效率高达 25.11%。使用 13.56 MHz 自制 RF-PECVD 在 c-Si 晶片表面引入超薄本征 a-Si:H 缓冲层，低沉积速率显示出优异的表面钝化。具有更高微观结构因子（R*）和 H 含量的超薄 ia-Si:H 薄膜明显增加了 SHJ 太阳能电池的开路电压（VOC）2 mV，此外，短路电流（ISC）和填充因子 (FF) 也得到显着改善，导致 0.52% 的绝对电池效率提高，其中 FF 是主要原因。为了探索高转换效率的SHJ太阳能电池，国产RF-PECVD和商用VHF-PECVD（40. 68 MHz) 用于沉积 ia-Si:H 钝化层。因此，RF-PECVD 制备的 SHJ 电池的效率比 VHF-PECVD 制备的高 0.21%，主要由 VOC 和 ISC 提升驱动。这项工作为制造可用于大规模生产的高性能 SHJ 太阳能电池提供了有用的工具。