Abstract This work aims to study the effect of loading magnesia (0.5–2.0 wt%) on the positron annihilation parameters and electrical properties of the PVA-PVP blend. The films were synthesized by solution casting and checked by different techniques. XRD and HRTEM of sol-gel prepared magnesia revealed that the average crystallite size was 14.29 nm with ribbon-like morphology with varying widths and lengths up to a few micrometers. SEM showed that the blend surface appeared smooth and homogenous and this confirmed the compatibility between PVA and PVP. However, loading magnesia increased surface roughness. TGA confirmed the thermal stability enhancement of blend film with magnesia incorporation. Ortho–positronium lifetime τ3 and the free volume V f decrease with loading magnesia while the intensity I3 is nearly constant. These features were interpreted in view of the hole-filling mechanism, the interaction between magnesia & blend and magnesia morphology. The equilibrium swelling ratio ESR was found for the studied films and a positive correlation between ESR and V f was reported. The current density-electric field, J-E, characteristics were of non-ohmic type. J increased with increasing magnesia levels and heating. The Richardson-Schottky effect was the dominant dc conduction mechanism at low temperature and low magnesia loading levels while it changed to Poole–Frenkel emission at higher values. Finally, a correlation between Log J and the intensity I2 was reported.

中文翻译：

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负载氧化镁纳米带对PVA-PVP共混物影响的正电子湮没和电学研究

摘要 本工作旨在研究负载氧化镁 (0.5-2.0 wt%) 对 PVA-PVP 共混物的正电子湮没参数和电性能的影响。这些薄膜是通过溶液浇铸合成的，并通过不同的技术进行检查。溶胶-凝胶制备的氧化镁的 XRD 和 HRTEM 显示平均微晶尺寸为 14.29 nm，具有不同宽度和长度的带状形态，可达几微米。SEM 表明共混物表面看起来光滑均匀，这证实了 PVA 和 PVP 之间的相容性。然而，加载氧化镁会增加表面粗糙度。TGA 证实了掺入氧化镁的共混膜的热稳定性增强。正电子寿命 τ3 和自由体积 V f 随加载氧化镁而降低，而强度 I3 几乎恒定。考虑到孔填充机制、氧化镁与混合物之间的相互作用以及氧化镁形态来解释这些特征。发现了所研究薄膜的平衡溶胀比 ESR，并报告了 ESR 和 V f 之间的正相关关系。电流密度-电场，JE，特性是非欧姆类型的。J 随着氧化镁含量的增加和加热而增加。Richardson-Schottky 效应是低温和低氧化镁负载水平下的主要直流传导机制，而在较高值时变为 Poole-Frenkel 发射。最后，报告了 Log J 和强度 I2 之间的相关性。发现了所研究薄膜的平衡溶胀比 ESR，并报告了 ESR 和 V f 之间的正相关关系。电流密度-电场，JE，特性是非欧姆类型的。J 随着氧化镁含量的增加和加热而增加。Richardson-Schottky 效应是低温和低氧化镁负载水平下的主要直流传导机制，而在较高值时变为 Poole-Frenkel 发射。最后，报告了 Log J 和强度 I2 之间的相关性。发现了所研究薄膜的平衡溶胀比 ESR，并报告了 ESR 和 V f 之间的正相关关系。电流密度-电场，JE，特性是非欧姆类型的。J 随着氧化镁含量的增加和加热而增加。Richardson-Schottky 效应是低温和低氧化镁负载水平下的主要直流传导机制，而在较高值时变为 Poole-Frenkel 发射。最后，报告了 Log J 和强度 I2 之间的相关性。Richardson-Schottky 效应是低温和低氧化镁负载水平下的主要直流传导机制，而在较高值时变为 Poole-Frenkel 发射。最后，报告了 Log J 和强度 I2 之间的相关性。Richardson-Schottky 效应是低温和低氧化镁负载水平下的主要直流传导机制，而在较高值时变为 Poole-Frenkel 发射。最后，报告了 Log J 和强度 I2 之间的相关性。