Abstract Black Silicon (BS) nanostructures fabricated by Reactive Ion Etching at Room Temperature (RT-RIE) are presented. We discuss the influence of the plasma process parameters on the silicon etching and their influence on the shape of the nanostructures constituting the BS. Furthermore, we study - both experimentally and using modeling by finite difference time domain (FDTD) method – how to increase absorptance in the visible and NIR regions using light trapping effect based on a fine control of the BS morphology. Absorptance higher than 99% is reached with a strong angular acceptance. This paper proposes an optimized process to fabricate high aspect ratio and high absorptance BS using a room temperature process.

中文翻译：

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室温反应离子刻蚀黑硅的形貌和光学特性

摘要 介绍了通过室温反应离子蚀刻 (RT-RIE) 制造的黑硅 (BS) 纳米结构。我们讨论了等离子体工艺参数对硅蚀刻的影响及其对构成 BS 的纳米结构形状的影响。此外，我们研究 - 通过实验和使用有限差分时域 (FDTD) 方法建模 - 如何使用基于 BS 形态的精细控制的光捕获效应来增加可见光和 NIR 区域的吸收率。吸收率高于 99%，具有很强的角接受度。本文提出了一种使用室温工艺制造高纵横比和高吸收率 BS 的优化工艺。