Abstract

Metal-semiconductor-metal (MSM) ultraviolet photodetector is fabricated on ZnO films, prepared by radio frequency magnetron sputtering technique on quartz substrates. The ZnO photodetector shows low dark current and external quantum efficiency (EQE) due to the gain effect. The device also exhibits a near linear responsivity dependence on voltage, which gradually rise to the peak first, then fall sharply, and then slightly rise again. A physical mechanism primarily focused on the relationship between carrier (electron-hole pairs) transport and barrier height at Schottky metal-semiconductor contact is given to explain the above phenomena. It is demonstrated as a straightforward and convenient way to enhance the internal gain of the simple ZnO-based Schottky photodetectors for application in the future.

Graphical abstract

中文翻译：

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肖特基金属-半导体接触对内部增益紫外光电探测器响应度的影响

摘要

以射频磁控溅射技术在石英衬底上制备的ZnO薄膜上制作了金属-半导体-金属（MSM）紫外光电探测器。由于增益效应，ZnO光电探测器显示出低的暗电流和外部量子效率（EQE）。该器件还表现出对电压的近乎线性的响应性，该电压先逐渐上升到峰值，然后急剧下降，然后再稍微上升。物理机制主要集中在肖特基金属-半导体接触处的载流子（电子-空穴对）传输和势垒高度之间的关系上，以解释上述现象。它被证明是增强简单的基于ZnO的肖特基光电探测器的内部增益的直接便捷的方法，以备将来应用。

图形概要