Traditional ferroelectric devices suffer a lack of scalability. Doped HfO₂ thin film is promising to solve the scaling problem but challenged by high leakage current and uniformity concern by the polycrystalline nature. Stable ferroelectric-like behavior is firstly demonstrated in a 3.6-nm-thick amorphous Al₂O₃ film. The amorphous Al₂O₃ devices are highly scalable, which enable multi-gate non-volatile field-effect transistor (NVFET) with nanometer-scale fin pitch. It also possesses the advantages of low process temperature, high frequency (~GHz), wide memory window, and long endurance, suggesting great potential in VLSI systems. The switchable polarization (P) induced by the voltage-modulated oxygen vacancy dipoles is proposed.

传统的铁电设备缺乏可扩展性。掺杂的HfO ₂薄膜有望解决结垢问题，但由于多晶性质而受到高泄漏电流和均匀性问题的挑战。首先在厚度为3.6 nm的非晶Al ₂ O ₃膜中证明了稳定的铁电性能。非晶Al ₂ O ₃器件具有高度可扩展性，可实现具有纳米级鳍片节距的多栅非易失性场效应晶体管（NVFET）。它还具有较低的过程温度，较高的频率（〜GHz），宽的存储窗口和长的使用寿命等优点，这表明在VLSI系统中具有巨大的潜力。可切换极化（P提出了由电压调制的氧空位偶极子引起的）。