This study discusses the exploitation of a full-3D methodology for the electromagnetic simulation of a Wafer-Level Packaging solution featuring Through Silicon Vias (TSVs) for the redistribution of electrical signal from the in-package (RF-MEMS) passive devices to the external world. In particular, the Finite Element Method full-3D model is parameterised and allows analysing the influence of the most relevant Degrees of Freedom (DoFs) available in the package design, on the RF characteristics of encapsulated RF-MEMS passive devices. A previous part of this work, already published, discussed the validation of the mentioned full-3D model, comparing the results of simulations against experimental S-parameters datasets for a certain variety of Coplanar Waveguide test structures, in a frequency range from 50 MHz up to 30 GHz. Such a comparison showed good accuracy in predicting the behaviour of physical devices. Therefore, the soundness of the optimisation approach can be regarded as proven and consolidated for the optimisation purposes of the current work.

这项研究讨论了采用全3D方法对晶片级封装解决方案进行电磁仿真的方法，该解决方案具有硅通孔（TSV），用于将电信号从封装内（RF-MEMS）无源器件重新分配到外部世界。特别是，对有限元方法全3D模型进行参数化，可以分析封装设计中可用的最相关自由度（DoF）对封装RF-MEMS无源器件的RF特性的影响。这项工作的前一部分已经出版，讨论了提到的全3D模型的验证，在50 MHz以上的频率范围内，比较了某些共面波导测试结构的实验结果与实验S参数数据集的比较结果至30 GHz。这样的比较显示了预测物理设备行为的良好准确性。因此，出于当前工作的优化目的，可以认为优化方法的合理性得到了证实和巩固。