Here, we introduce high-quality CuO–Graphene nanocomposite synthesis by hydrothermal method and used it as the interfacial layer to investigate radiation resistance in metal/interlayer/semiconductor (MIS) junction diode structure. In order to determine the effect of the nanocomposite layer on the electrical characteristics of Al/CuO–Graphene/p-Si/Al MIS junction diode, the current–voltage (I–V) measurements were performed at room temperature. The main electrical parameters of the junctions such as ideality factor (n), barrier height (Φ_b) were calculated using the thermionic emission (TE) theory and the results were compared with reference Schottky Diode (SD). The Φ_b and n values were calculated as 0.70 eV, 1.93 and 0.72 eV, 1.75 for reference SD and CuO–Graphene/p-Si MIS junction, respectively. The n value of the device reduced in the presence of the nanocomposite layer between the metal and the semiconductor. In addition, the Φ_b and series resistance (R_s) parameters were calculated from I–V measurements using Norde functions and the results were compared with the TE method. Furthermore, to determine the radiation tolerance property of the devices, gamma radiation was applied and the electrical parameters were evaluated for unirradiated and irradiated cases. The results showed that the fabricated devices may have various applications; thanks to radiation tolerance property. To the best of our knowledge, there is no research available regarding the exposure of CuO–Graphene thin films to gamma-ray irradiation studied using the I–V technique. Therefore, we believe that this study can make an important contribution to the literature.

在这里，我们介绍了通过水热法合成高质量的CuO-石墨烯纳米复合材料，并将其用作界面层以研究金属/中间层/半导体（MIS）结二极管结构中的抗辐射性。为了确定所述纳米复合材料层的对Al / CuO的石墨烯/对-的Si / Al MIS结二极管，所述电流-电压的电气特性的影响（余- V）测量在室温下进行。结的主要电气参数，例如理想因子（Ñ），势垒高度（Φ _b）使用的热电子发射（TE）理论计算并将结果与参考肖特基二极管（SD）进行了比较。的Φ _b对于参考SD和CuO-石墨烯/ p-Si MIS结，n值分别计算为0.70 eV，1.93和0.72 eV，1.75。在金属和半导体之间存在纳米复合层的情况下，器件的n值减小。此外，Φ _b和串联电阻（ř_小号）参数从计算我- V使用Norde函数进行测量，并将结果与​​TE方法进行比较。此外，为了确定设备的辐射耐受性，应用了伽马辐射，并对未辐照和辐照的情况评估了电参数。结果表明，所制造的器件可能具有多种应用。得益于抗辐射性能。据我们所知，目前尚无关于使用I – V技术研究的CuO–石墨烯薄膜在伽玛射线辐照下的研究。因此，我们认为这项研究可以为文献做出重要贡献。