Titania (TiOx) is re-emerging to be a passivating material for the surfaces of high-efficiency crystalline silicon solar cells. Numerous sources in the literature suggest that the surface passivation and thermal stability of TiOx deteriorates with increasing film thickness when the TiOx film is thicker than a sufficient thickness. To circumvent this limitation, this study presents a novel process of Al-doped TiOx (TiOx:Al) film, which demonstrates the potential for improved thermal stability and surface passivation. Based on grazing incident X-ray diffraction and UV-Raman measurements, the incorporation of Al impurity in TiOx effectively restrains the crystal phase transformation of the amorphous TiOx layer during deposition. Furthermore, the TiOx:Al films provide better thermal robustness up to 350 °C, which makes it highly compatible with Si solar cell fabrication processes.

中文翻译：

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Al掺杂对Si上TiO$_{\rm x}$表面钝化的影响

二氧化钛 (TiOx) 正在重新成为高效晶体硅太阳能电池表面的钝化材料。文献中的许多来源表明，当 TiOx 薄膜比足够的厚度厚时，TiOx 的表面钝化和热稳定性随着薄膜厚度的增加而恶化。为了规避这一限制，本研究提出了一种新的 Al 掺杂 TiOx (TiOx:Al) 薄膜工艺，该工艺展示了改善热稳定性和表面钝化的潜力。基于掠射入射 X 射线衍射和 UV-拉曼测量，在 TiOx 中掺入 Al 杂质有效地抑制了非晶 TiOx 层在沉积过程中的晶相转变。此外，TiOx:Al 薄膜在高达 350 °C 时提供更好的热稳定性，