Field-effect solar cells (FESCs) are increasingly attractive for 2-D heterojunction solar cells and especially for gate-tunable Schottky-junction solar cells. A prerequisite for applying FESCs is that the gate-leakage (GL) power must be far less than the output power. However, the conduction mechanism of the GL current in a FESC has yet to be described clearly, thereby leading to excessive gate power consumption. In this work, the GL current mechanisms for a silicon FESC are extracted and analyzed using temperature-dependent current-voltage measurements under dark and illuminated conditions. It shows that the GL current for a FESC in the dark is dominated by both temperature-dependent Poole-Frenkel (P-F) emission and hopping conduction, whereas, under illumination changes to the temperature-independent space-charge-limited (SCL) current. Furthermore, whether the incident light power of 62.5, 100, or 125 mW/cm2 is used, or the gate dielectric of SiO2 is replaced by HfO2, the dominant GL current mechanism is consistent. Finally, the trap energy level is approximately calculated as 0.38-0.72 eV based on a P-F emission analysis; the mean trap spacing of 0.01-0.18 nm and the activation energy of approximately 0.02 and 0.05 eV are extracted by a hopping conduction analysis. Meanwhile, a rigorous SCL conduction analysis provides a carrier mobility of 1.4 × 10-8 cm2·V-1·s-1 in SiO2 and 5.3 × 10-8 cm2·V-1·s-1 in HfO2.

中文翻译：

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硅场效应太阳能电池中的栅极漏电流机制


场效应太阳能电池（FESC）对于二维异质结太阳能电池，尤其是栅极可调肖特基结太阳能电池越来越有吸引力。应用FESC的先决条件是栅极泄漏（GL）功率必须远小于输出功率。然而，FESC中GL电流的传导机制尚未描述清楚，从而导致栅极功耗过高。在这项工作中，使用黑暗和光照条件下与温度相关的电流-电压测量来提取和分析硅 FESC 的 GL 电流机制。它表明，FESC 在黑暗中的 GL 电流主要由温度相关的普尔-弗兰克尔 (PF) 发射和跳跃传导主导，而在光照下，则变化为与温度无关的空间电荷限制 (SCL) 电流。此外，无论是使用 62.5、100 或 125 mW/cm2 的入射光功率，还是用 HfO2 代替 SiO2 栅极电介质，主要的 GL 电流机制都是一致的。最后，根据PF发射分析，陷阱能级大约计算为0.38-0.72 eV；通过跳跃传导分析提取了0.01-0.18 nm的平均陷阱间距和大约0.02和0.05 eV的活化能。同时，严格的SCL传导分析表明，SiO2中的载流子迁移率为1.4 × 10-8 cm2·V-1·s-1，HfO2中的载流子迁移率为5.3 × 10-8 cm2·V-1·s-1。