In recent years, the incorporation of hydrogen into indium and zinc oxide based TCOs has been recognized as an effective technique to improve the charge carrier mobility and hereby to relax the transparency-conductivity tradeoff within the thin films. On the other hand, the process sequence of poly-Si/SiOx based contacts typically requires an extra rehydrogenation step in order to improve the chemical interface passivation. This article addresses the combination of the two matters by studying the ability of both atomic layer deposited and sputter-deposited TCOs to serve as hydrogenation sources. Here, we demonstrate improved passivation of poly-Si(n)/SiOx contacts subsequent to TCO coatings and postdeposition thermal treatments resulting in iVoc values of up to 743 and 730 mV for planar and random pyramid textured surfaces, respectively. Thus, a high passivation quality could be obtained without the need of additional hydrogenation treatments. For the textured interface morphology, a substantial hydrogen flux toward the SiOx region turned out to be essential. This could either be ensured by adjusting the hydrogen partial pressure during the TCO growth process or by the addition of a thin AlOx layer, serving as a effusion barrier.

中文翻译：

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通过应用富氢透明导电氧化物改进基于 n 型多晶硅的钝化触点的钝化

近年来，将氢掺入基于氧化铟和氧化锌的 TCO 已被认为是提高电荷载流子迁移率并因此放松薄膜内透明度-导电性权衡的有效技术。另一方面，基于多晶硅/SiOx 的触点的工艺顺序通常需要额外的再氢化步骤，以改善化学界面钝化。本文通过研究原子层沉积和溅射沉积 TCO 作为氢化源的能力来解决这两个问题的结合。在这里，我们展示了在 TCO 涂层和沉积后热处理之后对多晶硅 (n)/SiOx 触点进行改进的钝化，导致平面和随机金字塔纹理表面的 iVoc 值分别高达 743 和 730 mV。因此，无需额外的氢化处理即可获得高钝化质量。对于纹理化界面形态，大量的氢流向 SiOx 区域是必不可少的。这可以通过在 TCO 生长过程中调整氢分压或通过添加薄的 AlOx 层来确保，作为渗出屏障。